MAX15019BASA+ Maxim Integrated Products, MAX15019BASA+ Datasheet - Page 7

IC MOSF DRVR HALF BRDG HS 8-SOIC

MAX15019BASA+

Manufacturer Part Number
MAX15019BASA+
Description
IC MOSF DRVR HALF BRDG HS 8-SOIC
Manufacturer
Maxim Integrated Products
Type
High Side/Low Sider
Datasheet

Specifications of MAX15019BASA+

Configuration
Half Bridge
Input Type
Inverting and Non-Inverting
Delay Time
36ns
Current - Peak
3A
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
125V
Voltage - Supply
8 V ~ 12.6 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
Rise Time
50 ns
Fall Time
40 ns
Supply Voltage (min)
8 V
Supply Current
2.75 mA
Maximum Power Dissipation
1904 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Bridge Type
Half Bridge
Maximum Turn-off Delay Time
36 ns
Maximum Turn-on Delay Time
36 ns
Minimum Operating Temperature
- 40 C
Number Of Drivers
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
(T
A
= +25°C, unless otherwise noted.)
PIN
1
2
3
4
5
6
7
8
DELAY MATCHING (DH AND DL RISING)
NAME
IN_H
GND
IN_L
V
BST
DH
HS
DL
EP
DD
_______________________________________________________________________________________
_______________________________________________________________________________________
Input Supply Voltage. Valid supply voltage ranges from 8V to 12.6V. Bypass V
combination of 0.1µF and 1µF ceramic capacitors as close to the IC as possible.
Boost Flying Capacitor Connection. Connect a 0.22µF ceramic capacitor from BST to HS as close to the IC
as possible for the high-side MOSFET driver supply.
High-Side Gate Driver Output. Driver output for the high-side MOSFET gate.
Source Connection for High-Side MOSFET. Also serves as the return for the high-side driver.
High-Side Noninverting Logic Input
Low-Side Noninverting (MAX15018A/MAX15019A) or Low-Side Inverting (MAX15018B/MAX15019B) Input
Ground. Use GND as a return path to the DL driver output and the IN_H, IN_L inputs. Must be connected to
ground.
Low-Side Gate Driver Output. Driver output for the low-side MOSFET gate.
Exposed Pad. Internally connected to GND. Externally connect the exposed pad to a large ground plane to
aid in heat dissipation. Grounding EP does not substitute the requirement to connect GND to ground.
10ns/div
C
MAX15018 toc18
L
= 0pF
V
10V/div
V
10V/div
IN_
DH
Typical Operating Characteristics (continued)
AND V
DL
Half-Bridge MOSFET Drivers
FUNCTION
125V/3A, High-Speed,
V
V
V
DH_
V
IN_
DD
DL
RESPONSE TO V
40µs/div
DD
DD
to GND with a parallel
Pin Description
GLITCH
MAX15018 toc19
10V/div
10V/div
10V/div
10V/div
7
7

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