MCP14E5-E/P Microchip Technology, MCP14E5-E/P Datasheet - Page 5
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MCP14E5-E/P
Manufacturer Part Number
MCP14E5-E/P
Description
IC MOSFET DVR 4.0A DUAL 8DIP
Manufacturer
Microchip Technology
Type
Low Sider
Datasheet
1.MCP14E5-EP.pdf
(26 pages)
Specifications of MCP14E5-E/P
Number Of Outputs
2
Configuration
Low-Side
Input Type
Inverting and Non-Inverting
Delay Time
46ns
Current - Peak
4A
Number Of Configurations
2
Voltage - Supply
4.5 V ~ 18 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Rise Time
30 ns
Fall Time
30 ns
Supply Voltage (min)
4.5 V
Supply Current
2 mA
Maximum Power Dissipation
1100 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 40 C
Number Of Drivers
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Side Voltage - Max (bootstrap)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
© 2008 Microchip Technology Inc.
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ V
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Enable Function (ENB_A, ENB_B)
High-Level Input Voltage
Low-Level Input Voltage
Hysteresis
Enable Leakage Current
Propagation Delay Time
Propagation Delay Time
Power Supply
Supply Voltage
Supply Current
Note 1:
Parameters
Switching times ensured by design.
V
V
V
I
Sym
V
R
ENBL
V
V
R
V
EN_H
HYST
I
I
I
I
I
I
I
I
V
t
t
EN_L
t
t
I
t
DD
DD
DD
DD
DD
DD
DD
DD
t
D1
D2
D3
D4
IN
OH
OH
DD
OL
OL
R
F
IH
IL
V
MCP14E3/MCP14E4/MCP14E5
DD
1.60
1.30
Min
–10
2.4
4.5
– 0.025
40
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.20
1.80
0.40
Typ
3.0
3.0
2.0
0.8
1.5
1.5
1.8
0.6
1.1
1.1
25
28
50
50
87
50
60
—
—
—
—
—
—
0.025
Max
2.90
2.40
18.0
+10
115
0.8
6.0
5.0
3.0
1.1
2.0
2.0
2.8
0.8
1.8
1.8
—
—
40
40
70
70
—
—
—
Units
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
ns
ns
ns
ns
ns
ns
V
V
V
V
Ω
Ω
V
V
V
V
0V ≤ V
DC TEST
DC TEST
I
I
Figure
C
Figure
C
Figure
Figure
V
V
V
Figure 4-3
Figure 4-3
V
ENB_A = ENB_B = High
V
ENB_A = ENB_B = High
V
ENB_A = ENB_B = High
V
ENB_A = ENB_B = High
V
ENB_A = ENB_B = Low
V
ENB_A = ENB_B = Low
V
ENB_A = ENB_B = Low
V
ENB_A = ENB_B = Low
OUT
OUT
DD
DD
DD
IN_A
IN_A
IN_A
IN_A
IN_A
IN_A
IN_A
IN_A
L
L
= 2200 pF
= 2200 pF
= 12V, LO to HI Transition
= 12V, HI to LO Transition
= 12V, ENB_A = ENB_B = GND
= 10 mA, V
= 10 mA, V
= 3V, V
= 0V, V
= 3V, V
= 0V, V
= 3V, V
= 0V, V
= 3V, V
= 0V, V
IN
4-1,
4-1,
4-1,
4-1,
≤ V
Figure 4-2
Figure 4-2
Figure 4-2
Figure 4-2
DD
Conditions
IN_B
IN_B
IN_B
IN_B
IN_B
IN_B
IN_B
IN_B
DD
DD
= 3V,
= 0V,
= 0V,
= 3V,
= 3V,
= 0V,
= 0V,
= 3V,
DD
= 18V
= 18V
DS22062B-page 5
≤ 18V.