LM2758TLX/NOPB National Semiconductor, LM2758TLX/NOPB Datasheet - Page 4

IC LED DRIVER PHOTO FLASH 12USMD

LM2758TLX/NOPB

Manufacturer Part Number
LM2758TLX/NOPB
Description
IC LED DRIVER PHOTO FLASH 12USMD
Manufacturer
National Semiconductor
Series
PowerWise®r
Type
Photo Flash LEDr
Datasheet

Specifications of LM2758TLX/NOPB

Constant Current
Yes
Topology
Switched Capacitor (Charge Pump)
Number Of Outputs
1
Internal Driver
Yes
Type - Primary
Flash/Torch
Frequency
800kHz ~ 1.5MHz
Voltage - Supply
2.7 V ~ 5.5 V
Voltage - Output
2.7 V ~ 5.3 V
Mounting Type
Surface Mount
Package / Case
12-MicroSMD
Operating Temperature
-40°C ~ 85°C
Current - Output / Channel
700mA
Internal Switch(s)
Yes
Efficiency
90%
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
LM2758TLX

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Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation
of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions,
see the Electrical Characteristics tables.
Note 2: All voltages are with respect to the potential to the GND pin.
Note 3: Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at T
140°C (typ.).
Note 4: The Human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. The machine model is a 200pF capacitor discharged
directly into each pin. MIL-STD-883 3015.7
Note 5: For detailed soldering specifications and information, please refer to National Semiconductor Application Note AN-1112.
Note 6: In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be
derated. Maximum ambient temperature (T
dissipation of the device in the application (P
following equation: T
Note 7: Junction-to-ambient thermal resistance (θ
JEDEC standard JESD51-7. The test board is a 4–layer FR-4 board measuring 102 mm x 76 mm x 1.6 mm with a 2x1 array of thermal vias. The ground plane
on the board is 50 mm x 50 mm. Thickness of copper layers are 53µm/35µm/35µm/53µm (1.5oz/1oz/1oz/1.5oz). Ambient temperature in simulation is 22°C, still
air. Power dissipation is 1W.
The value of θ
environmental conditions. In applications where high maximum power dissipation exists (high V
issues.
Note 8: Min and Max limits are guaranteed by design, test, or statistical analysis. Typical (Typ) numbers are not guaranteed, but do represent the most likely
norm. Unless otherwise specified, conditions for Typ specifications are: V
Note 9: C
Note 10: Output voltage is internally limited not to exceed maximum specified value.
Note 11: These specification table entries are guaranteed by design. These parameters are not guaranteed by production testing. The temperature limits for test
are (-40°C
Note 12: The temperature limits for I
temperature.
Note 13: The time-out specifications are calculated values based on the switching frequency spread.
IN
, C
T
JA
OUT
A
of this product in this micro SMD could fall in a range as wide as 50ºC/W to 150ºC/W (if not wider), depending on PWB material, layout, and
, C1, C2: Low-ESR Surface-Mount Ceramic Capacitors (MLCCs) used in setting electrical characteristics.
+85°C).
A-MAX
= T
J-MAX-OP
SD
- (θ
(shutdown current) test are -40°C
JA
A-MAX
× P
D-MAX
D-MAX
) is dependent on the maximum operation junction temperature (T
), and the junction-to ambient thermal resistance of the part/package in the application (θ
JA
) is taken from a thermal modeling result, performed under the conditions and guidelines set forth in the
).
IN
= 3.6V and T
T
A
4
+85°C, as in Shutdown mode ambient temperature is equal to junction
A
= 25°C.
IN
, high I
OUT
), special care must be paid to thermal dissipation
J-MAX-OP
J
=150°C (typ.) and disengages at T
= 125ºC), the maximum power
JA
), as given by the
J
=

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