MCP73213-B6SI/MF Microchip Technology, MCP73213-B6SI/MF Datasheet - Page 6

• Manufacturer Part Number: MCP73213-B6SI/MF
• Description: IC LI-ION/LI-POLY CTRLR 10-DFN
• Manufacturer: Microchip Technology

Specifications of MCP73213-B6SI/MF

• Battery Type: Lithium-Ion (Li-Ion), Lithium-Polymer (Li-Pol)
• Package / Case: 10-DFN
• Function: Charge Management
• Voltage - Supply: 4 V ~ 16 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Product: Charge Management
• Output Voltage: 8.2 V
• Operating Supply Voltage: 4.2 V to 13 V
• Supply Current: 700 uA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Charge Safety Timers: No
• Mounting Style: SMD/SMT
• Temperature Monitoring: No
• Uvlo Start Threshold: 4.15 V
• Uvlo Stop Threshold: 4.05 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: MCP73213EV-2SOVP - BOARD EVAL BATT CHARGER MCP73213
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

MCP73213
DC CHARACTERISTICS (CONTINUED)
DS22190B-page 6
Electrical Specifications: Unless otherwise indicated, all limits apply for V
T
Battery Short Protection
BSP Start Threshold
BSP Hysteresis
BSP Regulation Current
Current Regulation (Fast Charge, Constant-Current Mode)
Fast Charge Current
Regulation
Preconditioning Current Regulation (Trickle Charge Constant Current Mode)
Precondition Current Ratio
Precondition Voltage
Threshold Ratio
Precondition Hysteresis
Charge Termination
Charge Termination
Current Ratio
Automatic Recharge
Recharge Voltage
Threshold Ratio
Pass Transistor ON-Resistance
ON-Resistance
Status Indicator - STAT
Sink Current
Low Output Voltage
Input Leakage Current
PROG Input
Charge Impedance Range
Shutdown Impedance
Automatic Power Down
Automatic Power Down
Entry Threshold
Automatic Power Down
Exit Threshold
Thermal Shutdown
Die Temperature
Die Temperature
Hysteresis
Note 1:
A
= -40°C to +85°C. Typical values are at +25°C, V
Parameters
Not production tested. Ensured by design.
V
V
I
I
PREG
TERM
V
PTH
RTH
V
V
V
T
PDENTRY
I
R
R
R
V
BSPHYS
SHORT
PDEXIT
Sym
SHORT
I
SDHYS
I
DSON
SINK
V
PROG
PROG
T
REG
PHYS
I
LK
/ V
/ V
OL
SD
/ I
/ I
REG
REG
REG
REG
V
10 mV
Min
130
117
900
BAT
3.7
5.6
7.5
—
—
—
—
—
64
69
—
15
93
—
—
—
—
—
—
—
—
—
1
DD
+
= [V
REG
150 mV
V
V
50 mV
(Typical) + 1.0V]
0.001
1000
66.5
71.5
95.0
Typ
150
130
100
100
350
200
BAT
BAT
150
3.4
7.5
0.2
25
10
10
20
20
10
—
—
5
0
+
+
DD
250 mV
= [V
V
1100
1100
Max
12.5
143
BAT
6.3
9.4
0.5
—
—
—
—
—
69
74
—
25
97
—
—
35
22
—
—
—
—
1
REG
+
(Typical) + 0.3V] to 12V,
Units
mA
mΩ
mA
mV
mA
mA
mA
mV
µA
kΩ
kΩ
°C
°C
%
%
%
%
%
%
%
V
V
V
V
T
PROG = 10 kΩ
PROG = 1.1 kΩ
PROG = 1 kΩ to 10 kΩ
T
No Preconditioning
V
V
PROG = 1 kΩ to 10 kΩ
T
V
No Automatic Recharge
V
I
High Impedance, V
Impedance for Shutdown
V
V
© 2009 Microchip Technology Inc.
SINK
A
A
A
BAT
BAT
BAT
DD
DD
DD
=-5°C to +55°C
=-5°C to +55°C
= -5°C to +55°C
= 4.5V, T
Falling
Rising
Low-to-High
High-to-Low (Note 1)
High-to-Low
= 4 mA
Conditions
J
= 105°C (Note 1)
DD
on pin