NCP1200P40G ON Semiconductor, NCP1200P40G Datasheet - Page 9
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NCP1200P40G
Manufacturer Part Number
NCP1200P40G
Description
IC CTRLR PWM CM 8DIP
Manufacturer
ON Semiconductor
Datasheet
1.NCP1200P100G.pdf
(16 pages)
Specifications of NCP1200P40G
Output Isolation
Isolated
Frequency Range
36 ~ 48kHz
Voltage - Input
11.4 ~ 16 V
Operating Temperature
-25°C ~ 150°C
Package / Case
8-DIP (0.300", 7.62mm)
Number Of Outputs
1
Duty Cycle (max)
80 % (Typ)
Output Current
250 mA (Max)
Mounting Style
Through Hole
Switching Frequency
42 KHz (Typ)
Operating Supply Voltage
16 V
Maximum Operating Temperature
+ 150 C
Fall Time
28 ns
Rise Time
67 ns
Synchronous Pin
No
Topology
Flyback or Forward
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NCP1200P40GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NCP1200P40G
Manufacturer:
ON Semiconductor
Quantity:
135
Company:
Part Number:
NCP1200P40G
Manufacturer:
ON
Quantity:
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Part Number:
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Manufacturer:
ON/安森美
Quantity:
20 000
Power Dissipation
through the internal DSS circuitry. The current flowing
through the DSS is therefore the direct image of the
NCP1200 current consumption. The total power dissipation
can be evaluated using:
operate the device on a 250 VAC rail, the maximum rectified
voltage can go up to 350 VDC. As a result, the worse case
dissipation occurs on the 100 kHz version which will
dissipate 340 . 1.8 mA@Tj = −25° C = 612 mW (however
this 1.8 mA number will drop at higher operating
temperatures). Please note that in the above example, I
is based on a 1 nF capacitor loading pin 5. As seen before,
I
x Q
gate−charge Q
package offers a junction−to−ambient thermal resistance
of R
thus be computed knowing the maximum operating
ambient temperature (e.g. 70° C) together with the
maximum allowable junction temperature (125° C):
reach the worse consumption budget imposed by the 100
kHz version. Two solutions exist to cure this trouble. The
first one consists in adding some copper area around the
NCP1200 DIP8 footprint. By adding a min−pad area of 80
mm
which allows the use of the 100 kHz version. The other
solutions are:
the DIP8 package: 178°C/W. Again, adding some copper
area around the PCB footprint will help decrease this
number: 12 mm x 12 mm to drop R
with 35 m copper thickness (1 oz.) or 6.5 mm x 6.5 mm with
70 m copper thickness (2 oz.). One can see, we do not
recommend using the SOIC package for the 100 kHz version
with DSS active as the IC may not be able to sustain the
power (except if you have the adequate place on your PCB).
However, using the solution of the series diode or the
self−supply through the auxiliary winding does not cause
any problem with this frequency version. These options are
thoroughly described in the AND8023/D.
Pmax +
CC2
The NCP1200 is directly supplied from the DC rail
SOIC−8 package offers a worse R
1. Add a series diode with pin 8 (as suggested in the
2. Implement a self−supply through an auxiliary
2
g
qJ−A
will depend on your MOSFET’s Q
. Final calculations shall thus account for the total
of 35 m copper (1 oz.) R
above lines) to drop the maximum input voltage
down to 222 V ((2
less than 400 mW
winding to permanently disconnect the self−supply.
T
100° C/W. The maximum power dissipation can
Jmax
R
RqJ*A
* T
g
your MOSFET will exhibit. A DIP8
Amax
= 550 mW. As we can see, we do not
(V
350)/pi) and thus dissipate
HVDC
qJ−A
* 11 V) @ ICC2.
drops to about 75° C/W
qJ−A
qJ−A
g
: I
compared to that of
down to 100° C/W
CC2
= I
CC1
http://onsemi.com
If we
+ F
CC2
sw
9
Overload Operation
controlled (e.g. wall adapters delivering raw DC level), it is
interesting to implement a true short−circuit protection. A
short−circuit actually forces the output voltage to be at a low
level, preventing a bias current to circulate in the
optocoupler LED. As a result, the FB pin level is pulled up
to 4.1 V, as internally imposed by the IC. The peak current
setpoint goes to the maximum and the supply delivers a
rather high power with all the associated effects. Please note
that this can also happen in case of feedback loss, e.g. a
broken optocoupler. To account for this situation, the
NCP1200 hosts a dedicated overload detection circuitry.
Once activated, this circuitry imposes to deliver pulses in a
burst manner with a low duty cycle. The system recovers
when the fault condition disappears.
maximum until the output voltage reaches its target and the
feedback loop takes over. This period of time depends on
normal output load conditions and the maximum peak
current allowed by the system. The time−out used by this IC
works with the V
V
device internally watches for an overload current situation.
If this condition is still present when V
controller stops the driving pulses, prevents the self−supply
current source to restart and puts all the circuitry in standby,
consuming as little as 350 mA typical (I
a result, the V
this level crosses 6.3 V typical, the controller enters a new
startup phase by turning the current source on: V
toward 11.4 V and again delivers output pulses at the
UVLO
removed before UVLO
its normal operation. Otherwise, a new fault cycle takes
place. Figure 20 shows the evolution of the signals in
presence of a fault.
CC
In applications where the output current is purposely not
During the startup phase, the peak current is pushed to the
decreases from the V
H
crossing point. If the fault condition has been
CC
CC
level slowly discharges toward 0. When
decoupling capacitor: as soon as the
L
approaches, then the IC continues
CCOFF
level (typically 11.4 V) the
CCON
CC3
parameter). As
is reached, the
CC
rises