NCP1012AP065G ON Semiconductor, NCP1012AP065G Datasheet - Page 10

IC OFFLINE SWIT SMPS CM OVP 8DIP

NCP1012AP065G

Manufacturer Part Number
NCP1012AP065G
Description
IC OFFLINE SWIT SMPS CM OVP 8DIP
Manufacturer
ON Semiconductor
Datasheet

Specifications of NCP1012AP065G

Output Isolation
Isolated
Frequency Range
59 ~ 71kHz
Voltage - Input
8.5 ~ 10 V
Voltage - Output
700V
Power (watts)
19W
Operating Temperature
-40°C ~ 125°C
Package / Case
8-DIP (0.300", 7.62mm), 7 Leads
Duty Cycle (max)
72 %
Mounting Style
Through Hole
Switching Frequency
71 KHz
Operating Supply Voltage
- 0.3 V to + 10 V
Maximum Operating Temperature
+ 150 C
Synchronous Pin
No
Topology
Flyback
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NCP1012AP065GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NCP1012AP065G
Manufacturer:
ON/安森美
Quantity:
20 000
is expressed by:
the IC actually pulses is given by
Finally,
using the same formula topology:
From these three definitions, the burst duty- -cycle
can be computed:
equation with values extracted from the parameter section
gives a typical duty- -cycle of 13%, precluding any lethal
thermal runaway while in a fault condition.
DSS Internal Dissipation
drain pin. In Flyback- -based converters, this drain level can
easily go above 600 V peak and thus increase the stress on the
DSS startup source. However, the drain voltage evolves with
time and its period is small compared to that of the DSS. As
a result, the averaged dissipation, excluding capacitive losses,
can be derived by:
Figure 17 portrays a typical drain- -ground waveshape where
leakage effects have been removed.
dc =
The rising slope from the latch- -off level up to 8.5 V
The Dynamic Self- -Supplied pulls energy out from the
ICC1 ·
the
ICC1
ΔV2
ΔV2
Tstart =
latch- -off
+
P DSS = ICC1 · < Vds(t) > .
ΔV1
IC1
dc =
+
ΔV1 · C
ICC2
Tstart + Tsw + TLatch
ΔV3
IC1
Figure 16. NCP101X Facing a Fault Condition (Vin = 150 Vdc)
time
Tstart
(eq. 3)
. The time during which
Tsw
can
TLatch =
.
Tsw
tsw =
Feeding
be
ΔV3 · C
ΔV2 · C
derived
ICC2
ICC1
(eq. 2)
(eq. 4)
http://onsemi.com
the
TLatch
.
.
.
.
10
derived by additive square area calculation:
toff can be expressed by:
can be evaluated by:
1 V Ripple
By looking at Figure 17, the average result can easily be
By developing Equation 5, we obtain:
Vds(t)
Figure 17. A typical drain- -ground waveshape
where leakage effects are not accounted for.
Latch--off
< Vds(t) >= Vin − Vin · ton
Vin
Level
< Vds(t) >= Vin · (1 − d) + Vr · toff
ton
Vr
Tsw
ton = Ip ·
toff
toff = Ip ·
dt
Vin
Lp
Tsw
(eq. 8)
Lp
Vr
+ Vr · toff
(eq. 7)
.
Tsw
Tsw
where ton
(eq. 5)
(eq. 6)
t

Related parts for NCP1012AP065G