NCP1379DR2G ON Semiconductor, NCP1379DR2G Datasheet - Page 5

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NCP1379DR2G

Manufacturer Part Number
NCP1379DR2G
Description
IC CTLR QUASI CURRENT MODE 8SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of NCP1379DR2G

Output Isolation
Isolated
Voltage - Input
9 ~ 28 V
Operating Temperature
-40°C ~ 125°C
Package / Case
8-SOIC (0.154", 3.90mm Width)
Duty Cycle (max)
6.7 %
Mounting Style
SMD/SMT
Switching Frequency
65 KHz
Operating Supply Voltage
8.3 V to 12.3 V
Supply Current
1.7 mA
Maximum Operating Temperature
+ 125 C
Fall Time
25 ns
Minimum Operating Temperature
- 40 C
Rise Time
40 ns
Synchronous Pin
No
Topology
Quasi-Resonant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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ELECTRICAL CHARACTERISTICS
V
CURRENT COMPARATOR − CURRENT SENSE
DRIVE OUTPUT − GATE DRIVE
DEMAGNETIZATION INPUT − ZERO VOLTAGE DETECTION CIRCUIT
R
TIMING CAPACITOR − TIMING CAPACITOR
FEEDBACK SECTION − FEEDBACK
3. Guaranteed by design
4. The peak current setpoint goes down as the load decreases. It is frozen below I
5. If negative voltage in excess to −300 mV is applied to ZCD pin, the current setpoint decrease is no longer guaranteed to be linear
6. Minimum value for T
V
V
V
R
V
CS
V
V
V
ZCD(pdown)
V
Symbol
OPP(MAX)
V
DRV(high)
ZCD(HYS)
t
FB(pullup)
DRV(low)
CT(MAX)
CS(stop)
ZCD(TH)
t
R
R
BLANK
CT(MIN)
C
t
t
I
I
outSS
FB(TH)
V
I
V
DEM
BCS
SNK
SRC
t
I
= 0 V, V
C
ratio
SNK
SRC
PAR
out
CT
t
t
CH
CL
r
f
T
fault
Setpoint decrease for V
Threshold for immediate fault protection activation
Leading Edge Blanking Duration for V
Drive Resistance
DRV Sink
DRV Source
Drive current capability
DRV Sink
DRV Source
Rise Time (10 % to 90 %)
Fall Time (90 % to 10 %)
DRV Low Voltage
DRV High Voltage (Note 6)
ZCD threshold voltage
ZCD hysteresis
Input clamp voltage
High state
Low state
Propagation Delay
Internal input capacitance
Blanking delay after on−time
Timeout after last demag transition
Pulldown resistor (Note 3)
Maximum voltage on C
Source current
Minimum voltage on C
activated
Recommended timing capacitor value
Internal pullup resistor
Pin FB to current setpoint division ratio
FB pin threshold under which C
V
= 1.5 V, C
CT(MAX)
J
= 125°C
T
= 680 pF) For min/max values T
Parameter
T
T
ZCD
pin, discharge switch
pin
(Unless otherwise noted: For typical values T
= −300 mV (Note 5)
T
is clamped to
CS(stop)
http://onsemi.com
J
= −40°C to +125°C, Max T
5
C
V
C
C
After the end of soft−start
V
DRV
ZCD
DRV
DRV
V
ZCD
4 V, V
CC
V
During soft−start
V
V
I
= 1 nF, R
decreasing from 4 V
ZCD
I
pin1
V
= 1 nF, V
= 1 nF, V
CC
ZCD
V
V
C
pin1
= V
= −300 mV, V
Conditions
V
V
FB
V
DRV
DRV
DRV
to −0.3 V
DRV
DRV
CS
to 12 V
to 12 V
peak(VCO)
CT
= V
CC(off)
= −2.0 mA
decreasing
< V
increasing
= 3.0 mA
increasing
= 0 V
= 10 V
= 10 V
= 1 nF
CC(MAX)
= 2 V
= 2 V
J
FB(TH)
DRV
DRV
DRV
= 25°C, V
J
= 150°C, V
+ 0.2 V
=33 kW
(I
from 0
from 0
FB
peak
=
CC
= cst)
CC
= 12 V, V
1.125
35.0
10.5
−0.9
2.30
5.15
0.26
= 12 V)
Min
140
8.4
5.0
3.8
35
15
28
18
15
8
ZCD
1.200
37.5
12.5
13.0
−0.7
3.15
5.40
0.30
Typ
120
800
500
150
320
220
9.1
5.9
4.0
20
40
25
55
35
10
10
41
20
18
= 0 V, V
1.275
Max
40.0
15.5
−0.3
4.00
5.65
0.34
FB
250
500
6.7
4.2
75
60
90
55
12
54
22
90
22
= 3 V,
Unit
mA
mV
mV
mV
kW
kW
pF
mA
pF
ns
ns
ns
ns
ms
ms
%
W
V
V
V
V
V
V

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