CAT24C256WI-G ON Semiconductor, CAT24C256WI-G Datasheet - Page 2

• Manufacturer Part Number: CAT24C256WI-G
• Description: IC EEPROM 256KBIT 400KHZ 8SOIC
• Manufacturer: ON Semiconductor

Specifications of CAT24C256WI-G

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 256K (32K x 8)
• Speed: 400kHz
• Interface: I²C, 2-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Organization: 32 K x 8
• Interface Type: I2C
• Maximum Clock Frequency: 0.1 MHz
• Access Time: 3500 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 1.8 V
• Maximum Operating Current: 1 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Supply Voltage: 2.5 V, 3.3 V, 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
3. Page Mode, V
4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
5. When not driven, the WP pin is pulled down to GND internally. For improved noise immunity, the internal pull−down is relatively strong;
Table 1. ABSOLUTE MAXIMUM RATINGS
Table 2. RELIABILITY CHARACTERISTICS
Table 3. D.C. OPERATING CHARACTERISTICS
(
Table 4. PIN IMPEDANCE CHARACTERISTICS
(V
V
Storage Temperature
Voltage on any Pin with Respect to Ground (Note 1)
N
Symbol
C
C
I
CC
undershoot to no less than −1.5 V or overshoot to no more than V
and JEDEC test methods.
CC
and JEDEC test methods.
therefore the external driver must be able to supply the pull−down current when attempting to drive the input HIGH. To conserve power, as
the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x V
variable WP input impedance is available only for Die Rev. C and higher.
WP
END
V
V
I
IN
IN
CCR
I
V
Symbol
I
V
Symbol
CC
SB
OL1
OL2
I
L
IH
IL
= 2.5 V to 5.5 V, T
= 2.5 V to 5.5 V, T
T
(Note 4)
(Note 4)
(Note 5)
(Note 3)
DR
Read Current
Write Current
Standby Current
I/O Pin Leakage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
CC
Endurance
Data Retention
SDA I/O Pin Capacitance
Input Capacitance (other pins)
WP Input Current
(Product Revision C and higher)
= 5 V, 25°C.
Parameter
A
A
= −40°C to +125°C, and V
= −40°C to +125°C, and V
Parameter
Parameters
Read, f
Write, f
All I/O Pins at GND or V
Pin at GND or V
V
V
CC
CC
< 2.5 V, I
≥ 2.5 V, I
SCL
SCL
Parameter
(Note 2)
CC
CC
= 400 kHz
= 400 kHz
OL
OL
= 1.7 V to 5.5 V, T
= 1.7 V to 5.5 V, T
CC
= 3.0 mA
= 1.0 mA
http://onsemi.com
V
V
V
V
V
V
Test Conditions
IN
IN
IN
IN
IN
IN
< V
< V
< V
> V
= 0 V
= 0 V
CC
IH
IH
IH
IH
, V
, V
, V
CC
2
CC
CC
CC
+ 1.5 V, for periods of less than 20 ns.
A
A
= 5.5 V
= 3.3 V
= 1.7 V
T
T
T
T
= −40°C to +85°C, unless otherwise specified.)
= −40°C to +85°C, unless otherwise specified.)
CC
A
A
A
A
Conditions
= −40°C to +85°C
= −40°C to +125°C
= −40°C to +85°C
= −40°C to +125°C
), the strong pull−down reverts to a weak current source. The
CC
+ 0.5 V. During transitions, the voltage on any pin may
1,000,000
Min
100
V
–65 to +150
–0.5 to +6.5
CC
−0.5
Min
Ratings
x 0.7
Program/Erase Cycles
Max
130
120
80
V
V
8
6
1
CC
CC
Max
0.4
0.2
1
3
1
2
1
2
Units
Years
+ 0.5
x 0.3
Units
Units
Units
°C
pF
pF
mA
V
mA
mA
mA
mA
V
V
V
V