SDIN2C2-2G-T SanDisk, SDIN2C2-2G-T Datasheet - Page 7

IC INAND FLASH 2GB 169FBGA

SDIN2C2-2G-T

Manufacturer Part Number
SDIN2C2-2G-T
Description
IC INAND FLASH 2GB 169FBGA
Manufacturer
SanDisk
Type
Flash Diskr
Datasheets

Specifications of SDIN2C2-2G-T

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
16G (2G x 8)
Speed
50MHz
Interface
SD/SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-25°C ~ 85°C
Package / Case
169-FBGA
Density
2GByte
Operating Supply Voltage (typ)
3.3V
Operating Temperature (min)
-25C
Operating Temperature (max)
85C
Package Type
TFBGA
Mounting
Surface Mount
Pin Count
169
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Programmable
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SDIN2C2-2G-T
Manufacturer:
SanDisk
Quantity:
10 000
Revision 1.1
© 2007 SanDisk Corporation
1.10
iNAND — SD Bus Mode
When the host is ready to access a card in sleep mode, any command issued to it will cause
it to exit sleep, and respond.
The following sections provide valuable information on SanDisk iNAND in SD Bus mode.
SanDisk iNAND devices are fully compliant with the SDA Physical Layer Specification,
Version 2.00. Card Specific Data (CSD) Register structures are compliant with CSD
Structure 1.0 and 2.0.
This section covers Negotiating Operating Conditions, Card Acquisition and Identification,
Card Status, Memory Array Partitioning, Read/Write Operations, Data Transfer Rate, Data
Protection in Flash Cards, Write Protection, Copy Bit, and CSD Register.
Additional practical card detection methods can be found in application notes pertaining to
the SDA Physical Layer Specification, Version 2.00.
Figure 1-2
WP Group 0
Memory Array Partitioning
PRELIMINARY
1-4
SanDisk iNAND2
WP Group 1
WP Group 2
Sector 1
Sector 2
Sector 3
Sector n
Block
0
Block
1
SanDisk iNAND Product Manual
Block
2
Chapter 1 – Introduction
Block
n
02/09/07

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