SDED7-512M-NAY SanDisk, SDED7-512M-NAY Datasheet - Page 73
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SDED7-512M-NAY
Manufacturer Part Number
SDED7-512M-NAY
Description
IC MDOC H3 512MB FBGA
Manufacturer
SanDisk
Specifications of SDED7-512M-NAY
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
4G (512M x 8)
Interface
Parallel
Voltage - Supply
1.65 V ~ 1.95 V
Operating Temperature
-25°C ~ 85°C
Package / Case
115-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SDED7-512M-NAY EOL
Manufacturer:
SANDISK
Quantity:
18 445
Rev. 1.2
Notes: 1. All timing specifications are with reference to the rising edge of the Burst clock (CLK
10.3.7 Demux Burst Write Timing
73
Burst CLK
Address
2. Shown with the following Burst Mode Control Register (Read) parameters:
• HOLD = 0
• LENGTH = 8
• LATENCY = 0
• WAIT_STATE = 0
3. This diagram is applicable only if working with continuous clock.
4. Burst clock cycle time (Tcyc) values are specified for Turbo mode. While in Power-
Data
Tasu
Tah
Tcesu
Twesu
Tweh
Tcyc
Tdsu
Tdh
WE
CE
signal).
Save mode, clock cycle time should be doubled.
Symbol
Tces u
Address setup
Address hold
CE# setup
WE# setup time
WE# hold time
Burst clock cycle time
Data setup time
Data hold time
A0
Table 18: Demux Burst Write Timing Parameters
Tasu
Twesu
Tweh
Tah
Figure 28: Demux Burst Write Timing Diagram
Description
D0
Tdh
Tdsu
Tcyc
Tcyc
D1
12.5
mDOC H3 EFD Featuring Embedded TrueFFS Data Sheet
Min
2.5
2.5
4
7
4
5
4
1.8V
D2
Max
D3
12.5
Min
2.5
2.5
4
7
4
5
4
3.3V
Max
Product Specifications
Units
ns
ns
ns
ns
ns
ns
ns
ns
92-DS-1205-10