DS1254YB-100 Maxim Integrated Products, DS1254YB-100 Datasheet - Page 13

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DS1254YB-100

Manufacturer Part Number
DS1254YB-100
Description
IC NVSRAM 16MBIT 100NS 168BGA
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of DS1254YB-100

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
16M (2M x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
168-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DS1254YB-100
Manufacturer:
Maxim Integrated
Quantity:
10 000
NOTES:
1) Voltage referenced to ground.
2) These parameters are sampled with a 50pF load and are not 100% tested.
3) BW is an open-drain output and, as such, cannot source current. An external pullup resistor should be
4) The DS3800 battery cap is a one-time use part, but can be removed and replaced. By design, DS3800 removal
5) t
6) t
7) t
8) t
9) WE is high for a read cycle.
10) OE = V
11) If the CE low transition occurs simultaneously with or later than the WE low transition in a write-enable-
12) If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain
13) If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output
14) In a power-down condition, the voltage on any pin cannot exceed the voltage on V
connected to this pin for proper operation. BW can sink 10mA.
will mechanically damage the battery cap, which eliminates the accidental use of a previously attached and
possibly low-capacity battery cap.
earlier of CE or WE going high.
controlled write cycle, the output buffers remain in a high-impedance state during this period.
in a high-impedance state during this period.
buffers remain in a high-impedance state during this period.
WP
AH1
AH2
DS
is measured from the earlier of CE or WE going high.
, t
, t
specified as the logical AND of CE and WE, t
DH1
DH2
IH
are measured from WE going high.
are measured from CE going high.
or V
IL
. If OE = V
IH
during write cycle, the output buffers remain in a high-impedance state.
13 of 17
WP
is measured from the latter of CE or WE going low to the
CC
.
DS1254

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