DS2016-100 Maxim Integrated Products, DS2016-100 Datasheet - Page 5

IC SRAM 16KBIT 100NS 24DIP

DS2016-100

Manufacturer Part Number
DS2016-100
Description
IC SRAM 16KBIT 100NS 24DIP
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of DS2016-100

Format - Memory
RAM
Memory Type
SRAM
Memory Size
16K (2K x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
24-DIP (0.600", 15.24mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
DS2016100
AC CHARACTERISTICS WRITE CYCLE
DATA RETENTION CHARACTERISTICS
* Typical values are at +25°C
TIMING DIAGRAM: READ CYCLE
PARAMETER
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High-Z from
Output Active from
Data Setup Time
Data Hold Time
PARAMETER
Data Retention
Supply Voltage
Data Retention
Current at 3.5V
Data Retention
Current at 2.0V
Chip Deselect to
Data Retention
Recovery Time
SEE NOTE 1
WE
WE
SYMBOL
I
I
V
t
CCR1
CCR2
CDR
t
DR
R
SYMBOL
t
t
t
t
t
t
ODW
OEW
t
t
WC
AW
WR
WP
DH
DS
CE
CE
CE
CONDITIONS
³ V
³ V
³ V
5 of 8
MIN
(T
250
190
100
25
CC
CC
CC
0
5
0
A
- 0.3V
- 0.3V
- 0.3V
= -40°C to +85°C; V
TYP
MIN TYP
2.0
MAX
0
2
90
(T
50*
50*
A
= -40°C to +85°C)
CC
UNITS
MAX
= 2.7V to 3.5V)
1000
ns
ns
ns
ns
ns
ns
ns
ns
750
3.5
UNITS
NOTES
nA
nA
ms
µs
V

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