R1LP0408CSB-5SC#B0 Renesas Electronics America, R1LP0408CSB-5SC#B0 Datasheet - Page 7
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R1LP0408CSB-5SC#B0
Manufacturer Part Number
R1LP0408CSB-5SC#B0
Description
IC SRAM 4MBIT 55NS 32TSOP
Manufacturer
Renesas Electronics America
Datasheet
1.R1LP0408CSP-5SCB0.pdf
(16 pages)
Specifications of R1LP0408CSB-5SC#B0
Format - Memory
RAM
Memory Type
SRAM
Memory Size
4M (512K x 8)
Speed
55ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-20°C ~ 70°C
Package / Case
32-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
R1LP0408CSB5SC#B0
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
R1LP0408C-C Series
Operation Table
WE#
×
H
H
L
L
Note: H: V
Absolute Maximum Ratings
Parameter
Power supply voltage relative to V
Terminal voltage on any pin relative to V
Power dissipation
Operating temperature
Storage temperature range
Storage temperature range under bias
Notes: 1. V
DC Operating Conditions
(Ta = −20 to +70°C)
Parameter
Supply voltage
Input high voltage
Input low voltage
Note:
Rev.2.00, May.26.2004, page 5 of 12
2. Maximum voltage is +7.0 V.
1. V
CS#
H
L
L
L
L
IH
T
IL
, L: V
min: −3.0 V for pulse half-width ≤ 30 ns.
min: −3.0 V for pulse half-width ≤ 30 ns.
OE#
×
H
L
H
L
IL
, ×: V
Mode
Not selected
Output disable
Read
Write
Write
IH
or V
Symbol
V
V
V
V
CC
SS
IH
IL
IL
SS
SS
Min
4.5
0
2.2
−0.3*
V
I
I
I
I
I
SB
CC
CC
CC
CC
Symbol
V
V
P
Topr
Tstg
Tbias
CC
CC
T
T
, I
current
SB1
1
Typ
5.0
0
Value
−0.5 to +7.0
−0.5*
0.7
−20 to +70
−65 to +150
−20 to +85
I/O0 to I/O7
High-Z
High-Z
Dout
Din
Din
1
to V
CC
Max
5.5
0
V
0.8
+ 0.3*
CC
Ref. cycle
Read cycle
Write cycle (1)
Write cycle (2)
+ 0.3
2
Unit
V
V
W
°C
°C
°C
Unit
V
V
V
V