M5M5W816TP-70HI#A0 Renesas Electronics America, M5M5W816TP-70HI#A0 Datasheet - Page 9

• Manufacturer Part Number: M5M5W816TP-70HI#A0
• Description: IC SRAM 8MBIT 70NS 44TSOP
• Manufacturer: Renesas Electronics America

Specifications of M5M5W816TP-70HI#A0

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 8M (512K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: M5M5W816TP70HI#A0

2002.08.30
BC1#,BC2#
M5M5W816TP - 55HI, 70HI, 85HI
Note 3: Hatching indicates the state is "don't care".
Note 4: A Write occurs during S# low ov erlaps BC1# and/or BC2# low and W# low.
Note 5: When the f alling edge of W# is simultaneously or prior to the f alling edge of BC1# and/or BC2# or the f alling edge of
Note 6: Don't apply inv erted phase signal externally when DQ pin is in output mode.
DQ
A
S#
W#
0~18
Write cycle (BC# control mode)
1~16
S#, the outputs are maintained in the high impedance state.
Ver. 6.1
(Note3)
(Note3)
(Note5)
t
su
(A)
t
su
t
su
(Note4)
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
(BC1) or
(BC2)
t
su
t
CW
(D)
DATA IN
STABLE
t
h
t
(D)
rec
(W)
(Note3)
(Note3)
MITSUBISHI LSIs
6