TC58DVG02A1FT Toshiba, TC58DVG02A1FT Datasheet - Page 27

• Manufacturer Part Number: TC58DVG02A1FT
• Description: IC FLASH 1GBIT 50NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58DVG02A1FT

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Speed: 50ns
• Interface: Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Multi Block Program
command after some sets of the address and data have been input.
command is used when it still continues the data input into another District.
Data input
The device carries out an Multi Block Program operation when it receives a “15H” or “10H” Program
In the interval of the Multi District adress and the (512
The sequence of command, address and data input is shown below. (Refer to the detailed timing chart.)
After “15H” Multi Block Program command, physical programing starts as follows.
RY
Data input
command
Selected
page
/
BY
80
Program
Address
input
80
following input of the “15H” command. After programming, the programmed data is transferred back to the
register to be automatically verified by the device. If the programming does not succeed, the
Program/Verify operation is repeated by the device until success is achieved or until the maximum loop
number set in the device is reached.
The data is transferred (programmed) from the register to the selected page on the rising edge of -WE
Data input
(District 0)
0 to 527
command
Program
Dummy
Reading & verification
11
11
Data input
command
80
Address
80
input
(District 1)
Data input
0 to 527
command
Program
Dummy
11
11
Data input
command
80
Address
80
input
16 byte) data input, “11H” Dummy Program
(District 2)
Data input
0 to 527
command
Program
Dummy
11
11
TC58DVG02A1FT00
Data input
command
80
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80
Address
input
(District 3)
Data input
0 to 527
Multi block
command
Program
15
15