TC58256AFT Toshiba, TC58256AFT Datasheet - Page 32

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TC58256AFT

Manufacturer Part Number
TC58256AFT
Description
IC FLASH 256MBIT 50NS 48TSOP
Manufacturer
Toshiba
Datasheet

Specifications of TC58256AFT

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
256M (32M x 8)
Speed
50ns
Interface
Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TC58256AFT(YBJ)

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Failure phenomena for Program and Erase operations
The following possible failure modes should be considered when implementing a highly reliable system.
Block
Page
Single Bit
The device may fail during a Program or Erase operation.
ECC: Error Correction Code
Block Replacement
Program
Erase
When an error occurs in an Erase operation, prevent future accesses to this bad block
(again by creating a table within the system or by using another appropriate scheme).
memory
FAILURE MODE
Buffer
Erase Failure
Programming
Failure
Programming
Failure
1 → 0
Error occurs
Figure 28.
Status Read after Erase → Block Replacement
Status Read after Program → Block Replacement
(1) Block Verify after Program → Retry
(2) ECC
DETECTION AND COUNTERMEASURE SEQUENCE
Block A
Block B
reprogram the data into another Block (Block B)
by loading from an external buffer. Then,
prevent further system accesses to Block A (by
creating a bad block table or by using an
another appropriate scheme).
When an error happens in Block A, try to
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TC58256AFT

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