STK14CA8-RF35ITR Cypress Semiconductor Corp, STK14CA8-RF35ITR Datasheet - Page 6
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STK14CA8-RF35ITR
Manufacturer Part Number
STK14CA8-RF35ITR
Description
IC NVSRAM 1MBIT 35NS 48SSOP
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.STK14CA8-NF25.pdf
(17 pages)
Specifications of STK14CA8-RF35ITR
Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
1M (128K x 8)
Speed
35ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-SSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
SRAM READ Cycles #1 and #2
Notes
Document Number: 001-51592 Rev. *A
3. W must be high during SRAM READ cycles.
4. Device is continuously selected with E and G both low
5. Measured ± 200mV from steady state output voltage.
6. HSB must remain high during READ and WRITE cycles
NO.
10
11
1
2
3
4
5
6
7
8
9
t
t
t
AVAV
AVQV
AXQX
#1
[3]
DQ (DATA OUT)
[4]
[4]
ADDRESS
Symbols
t
t
t
t
t
t
t
t
t
t
t
ELQV
ELEH
AVQV
GLQV
AXQX
ELQX
EHQZ
GLQX
GHQZ
ELICCH
EHICCL
#2
[3]
[4]
[4]
[5]
[5]
[2]
[2]
t
t
t
t
t
t
t
t
t
t
t
ACS
RC
AA
OE
OH
LZ
HZ
OLZ
OHZ
PA
PS
Alt.
Figure 6. SRAM READ Cycle #1: Address Controlled
Figure 7. SRAM READ Cycle #2: E and G Controlled
Chip Enable Access Time
Read Cycle Time
Address Access Time
Output Enable to Data Valid
Output Hold after Address Change
Address Change or Chip Enable to
Output Active
Address Change or Chip Disable to
Output Inactive
Output Enable to Output Active
Output Disable to Output Inactive
Chip Enable to Power Active
Chip Disable to Power Standby
t
AXQX
10
5
6
3
8
Parameter
4
t
1
AVQV
2
3
t
AVAV
2
STK14CA8-25 STK14CA8-35 STK14CA8-45
Min
25
DATA VALID
3
3
0
0
Max
25
25
12
10
10
25
29
[3, 4, 6]
[3, 6]
Min
35
3
3
0
0
9
7
Max
35
35
15
13
13
35
11
Min
45
3
3
0
0
STK14CA8
Max
45
45
20
15
15
45
Page 6 of 17
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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