NAND512W3A2CZA6E NUMONYX, NAND512W3A2CZA6E Datasheet - Page 35

• Manufacturer Part Number: NAND512W3A2CZA6E
• Description: IC FLASH 512MBIT 63VFBGA
• Manufacturer: NUMONYX

Specifications of NAND512W3A2CZA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

NAND512-A2C
10
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
Table 16: Operating and AC measurement
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 16.
Table 17.
1. T
2. Input/output capacitances double on stacked devices.
Supply voltage (V
Ambient temperature (T
Load capacitance (C
and C
Input pulses voltages
Input and output timing ref. voltages
Input rise and fall times
Output circuit resistors, R
Symbol
C
C
A
I/O
IN
= 25 °C, f = 1 MHz. C
L
)
Input capacitance
Input/output
capacitance
Operating and AC measurement conditions
Capacitance
DD
Parameter
)
L
) (1 TTL GATE
A
)
IN
ref
Parameter
and C
(1)(2)
I/O
are not 100% tested.
Test conditions
V
V
1.8 V devices
1.8 V devices
1.8 V devices
1.8 V devices
3 V devices
3 V devices
3 V devices
3 V devices
IN
IL
conditions. Designers should check that the
Grade 6
= 0 V
= 0 V
Typ
Min
–40
1.7
2.7
0.4
0
NAND flash
8.35
DC and AC parameters
0.9
1.5
30
50
5
Max
Max
1.95
10
10
V
3.6
2.4
85
DD
Units
Unit
kΩ
pF
pF
°C
pF
pF
ns
V
V
V
V
V
V
35/55