M25P128-VME6TG NUMONYX, M25P128-VME6TG Datasheet - Page 40

• Manufacturer Part Number: M25P128-VME6TG
• Description: IC FLASH 128MBIT 50MHZ 8VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P128-VME6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 50MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VDFPN
• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VDFPN EP
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25P128-VME6TGCT

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Table 17.
1. t
2. Value is guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for WRSR instruction when SRWD is set to 1.
5. V
6. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are
Figure 20. Serial input timing
S
C
D
Q
Symbol
(success or failure) is known.
obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. If only a
single byte is programmed, the estimated programming time is close to the time needed to program a full
page of 256 Bytes. Therefore, it is highly recommended to use the Page Program (PP) instruction with a
sequence of 256 consecutive Bytes. (1 ≤ n ≤ 256)
CH
PPH
t
BE
and t
should be kept at a valid level until the program or erase operation has completed and its result
tCHSL
CL
must be greater than or equal to 1/f
AC characteristics for 130 nm devices (continued)
Alt.
tDVCH
Bulk Erase Cycle Time
Bulk Erase Cycle Time (V
Test conditions specified in
High Impedance
MSB IN
tSLCH
tCHDX
Parameter
C
(max).
PP
= V
Table 11
PPH
tCLCH
)
tCHSH
and
LSB IN
Table 12
Min.
tCHCL
tSHSL
56
Typ.
105
(2)
tSHCH
Max.
250
AI01447C
Unit
s