CY7C1512AV18-250BZI Cypress Semiconductor Corp, CY7C1512AV18-250BZI Datasheet - Page 21

• Manufacturer Part Number: CY7C1512AV18-250BZI
• Description: IC SRAM 72MBIT 250MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1512AV18-250BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 72M (4M x 18)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
AC Electrical Characteristics
Over the Operating Range
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Document #: 001-06984 Rev. *C
I
V
V
C
C
C
SB1
Parameter
Parameter
Parameter
Parameter
IH
IL
IN
CLK
O
Θ
Θ
JA
JC
Automatic Power down
Current
Input HIGH Voltage
Input LOW Voltage
Input Capacitance
Clock Input Capacitance
Output Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Description
Description
Description
Description
[12]
[11]
(continued)
Max V
Both Ports Deselected,
V
f = f
Inputs Static
IN
≥ V
MAX
T
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
A
DD
IH
= 25°C, f = 1 MHz, V
= 1/t
,
or V
Test Conditions
CYC
IN
Test Conditions
≤ V
,
IL
Test Conditions
Test Conditions
250MHz
200MHz
167MHz
DD
= 1.8V, V
CY7C1510AV18, CY7C1525AV18
CY7C1512AV18, CY7C1514AV18
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
DDQ
V
= 1.5V
REF
Min
Min
–
+ 0.2
165 FBGA
Package
Typ
Typ
–
–
Max
16.2
5.5
8.5
2.3
6
V
REF
Max
Max
400
400
400
400
380
380
380
380
360
360
360
360
–
– 0.2
Page 21 of 28
°C/W
°C/W
Unit
Unit
pF
pF
pF
Unit
Unit
mA
mA
mA
V
V
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