CY7C1265V18-400BZC Cypress Semiconductor Corp, CY7C1265V18-400BZC Datasheet - Page 18

• Manufacturer Part Number: CY7C1265V18-400BZC
• Description: IC SRAM 36MBIT 400MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1265V18-400BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 36M (1M x 36)
• Speed: 400MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

TAP Timing and Test Conditions
Notes
Document Number: 001-06366 Rev. *E
15. t
16. Test conditions are specified using the load in TAP AC test conditions. t
CS
and t
CH
refer to the setup and hold time requirements of latching data from the boundary scan register.
TDO
Test Mode Select
TMS
Test Clock
TCK
Test Data In
TDI
Test Data Out
TDO
Z
0
= 50Ω
(a)
GND
0.9V
C
50Ω
L
= 20 pF
[16]
t
TMSS
t
TDIS
R
/t
F
= 1 ns.
t
t
0V
TDOV
TH
t
t
TL
TMSH
t
TDIH
1.8V
CY7C1261V18, CY7C1276V18
CY7C1263V18, CY7C1265V18
ALL INPUT PULSES
t
0.9V
TDOX
t
TCYC
Page 18 of 29
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