M29W800DT70N6 NUMONYX, M29W800DT70N6 Datasheet - Page 33

• Manufacturer Part Number: M29W800DT70N6
• Description: IC FLASH 8MBIT 70NS 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W800DT70N6

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 8M (1M x 8 or 512K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 25. CFI Query System Interface Information
Note: 1. Not supported in the CFI
Table 26. Device Geometry Definition
1Ch
1Dh
2Ah
2Bh
2Ch
2Dh
2Eh
1Bh
1Eh
1Fh
x16
27h
28h
29h
2Fh
30h
31h
32h
33h
34h
35h
36h
x16
20h
21h
22h
23h
24h
25h
26h
Address
Address
5Ch
6Ch
3Ch
4Ch
4Eh
50h
52h
54h
56h
58h
5Ah
5Eh
60h
62h
64h
66h
68h
6Ah
3Ah
3Eh
4Ah
36h
38h
40h
42h
44h
46h
48h
x8
x8
000Ah
0027h
0036h
0000h
0000h
0004h
0000h
0000h
0004h
0000h
0003h
0000h
0014h
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0040h
0000h
0001h
0000h
0020h
0000h
0000h
0000h
Data
Data
V
V
V
V
Typical timeout per single byte/word program = 2
Typical timeout for minimum size write buffer program = 2
Typical timeout per individual block erase = 2
Typical timeout for full chip erase = 2
Maximum timeout for byte/word program = 2
Maximum timeout for write buffer program = 2
Maximum timeout per individual block erase = 2
Maximum timeout for chip erase = 2
Device Size = 2
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
Region 1 Information
Number of identical size erase block = 0000h+1
Region 1 Information
Block size in Region 1 = 0040h * 256 byte
Region 2 Information
Number of identical size erase block = 0001h+1
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
Region 3 Information
Number of identical size erase block = 0000h+1
CC
CC
PP
PP
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase voltage
Logic Supply Maximum Program/Erase voltage
n
in number of bytes
Description
Description
n
n
times typical
ms
n
n
n
times typical
M29W800DT, M29W800DB
ms
times typical
n
n
times typical
µs
n
µs
n
see note (1)
see note (1)
256µs
Value
16 Kbyte
16µs
2.7V
3.6V
1 MByte
8 Kbyte
x8, x16
NA
NA
NA
NA
Async.
1s
8s
Value
NA
4
1
2
1
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