M29W320EB70N6 NUMONYX, M29W320EB70N6 Datasheet - Page 28
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M29W320EB70N6
Manufacturer Part Number
M29W320EB70N6
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29W320EB70N6.pdf
(63 pages)
Specifications of M29W320EB70N6
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
32M (4Mx8, 2Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W320EB70N6
Manufacturer:
STM
Quantity:
1 948
Company:
Part Number:
M29W320EB70N6
Manufacturer:
ST
Quantity:
4 000
Part Number:
M29W320EB70N6
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
M29W320EB70N6E
Manufacturer:
MICRON
Quantity:
101
Company:
Part Number:
M29W320EB70N6E
Manufacturer:
Numonyx
Quantity:
23 040
Company:
Part Number:
M29W320EB70N6E
Manufacturer:
Numonyx/48
Quantity:
184
Part Number:
M29W320EB70N6E
Manufacturer:
ST
Quantity:
20 000
Command interface
Table 6.
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
4. Maximum value measured at worst case conditions for both temperature and V
28/63
Chip Erase
Block Erase (64 Kbytes)
Erase Suspend Latency time
Program (byte or word)
Double word Program (byte or word)
Chip Program (byte by byte)
Chip Program (word by word)
Chip Program (Quadruple byte or Double word)
Program/Erase Cycles (per Block)
Data Retention
Program, Erase times and Program, Erase Endurance cycles
Parameter
100,000
Min
20
CC
CC
.
after 100,00 program/erase cycles.
Typ
0.8
40
10
10
40
20
10
(1)(2)
M29W320ET, M29W320EB
Max
100
200
200
200
200
100
50
6
(3)
(4)
(3)
(4)
(3)
(3)
(3)
(3)
(2)
cycles
years
Unit
µs
µs
µs
s
s
s
s
s