M29W160EB70N6 NUMONYX, M29W160EB70N6 Datasheet - Page 22

• Manufacturer Part Number: M29W160EB70N6
• Description: IC FLASH 16MBIT 70NS 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W160EB70N6

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 16M (2M x 8 or 1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M29W160ET, M29W160EB
Figure 11. Read Mode AC Waveforms
Table 12. Read AC Characteristics
Note: 1. Sampled only, not 100% tested.
22/40
t
t
t
t
Symbol
GLQX
EHQZ
GHQZ
ELQX
t
t
t
t
t
t
t
t
t
A0-A19/
A–1
E
G
DQ0-DQ7/
DQ8-DQ15
t
t
EHQX
GHQX
BHQV
AVQV
ELQV
GLQV
AXQX
ELBH
BLQZ
AVAV
ELBL
BYTE
(1)
(1)
(1)
(1)
t
t
t
t
t
FHQV
t
ELFH
FLQZ
ELFL
t
t
ACC
t
t
t
t
Alt
OLZ
t
RC
OE
OH
CE
HZ
DF
LZ
tELBL/tELBH
Address Valid to Next Address Valid
Address Valid to Output Valid
Chip Enable Low to Output Transition
Chip Enable Low to Output Valid
Output Enable Low to Output Transition
Output Enable Low to Output Valid
Chip Enable High to Output Hi-Z
Output Enable High to Output Hi-Z
Chip Enable, Output Enable or Address
Transition to Output Transition
Chip Enable to BYTE Low or High
BYTE Low to Output Hi-Z
BYTE High to Output Valid
Parameter
tAVQV
tBHQV
tELQX
tELQV
tGLQX
tGLQV
tAVAV
VALID
E = V
E = V
Test Condition
G = V
G = V
G = V
G = V
G = V
E = V
E = V
E = V
tBLQZ
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
,
,
VALID
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
tGHQX
tGHQZ
70
70
70
70
30
25
25
25
30
0
0
0
5
M29W160E
tEHQZ
90
90
90
90
35
30
30
30
40
0
0
0
5
tEHQX
tAXQX
AI02922
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns