M29F400BB55N1 NUMONYX, M29F400BB55N1 Datasheet - Page 27
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M29F400BB55N1
Manufacturer Part Number
M29F400BB55N1
Description
IC FLASH 4MBIT 55NS 48TSOP
Manufacturer
NUMONYX
Datasheet
1.M29F400BB70N6T.pdf
(40 pages)
Specifications of M29F400BB55N1
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
4M (512K x 8 or 256K x 16)
Speed
55ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29F400BB55N1
Manufacturer:
ST
Quantity:
14 009
M29F400BT, M29F400BB
7
Program and erase times and endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per block are
shown in
Table 8.
1. T
2. T
Chip Erase (All bits in the memory set to ‘0’)
Chip Erase
Block Erase (64 Kbytes)
Program (Byte or Word)
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Program/Erase Cycles (per Block)
A
A
= 0 to 70°C, –40 to 85°C or –40 to 125°C
= 25°C, V
Table
Program/ Erase times endurance cycles
CC
8. Exact erase times may change depending on the memory array condition.
Parameter
= 5V.
Program and erase times and endurance cycles
100,000
Min
Typ
1.5
0.6
4.5
2.3
5
8
(2)
(1)
100k W/E Cycles
Typical after
1.5
0.6
4.5
2.3
(2)
5
8
Max
150
20
18
4
9
cycles
Unit
27/40
µs
s
s
s
s
s