M29F200BB70N6E NUMONYX, M29F200BB70N6E Datasheet

Page 1

... Electronic Signature – Manufacturer code: 0020h – Top Device code M29F200BT: 00D3h – Bottom Device code: M29F200BB: 00D4h ® ECOPACK packages available March 2007 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory 44 Rev 5 M29F200BT M29F200BB TSOP48 ( 20mm 1 SO44 (M) 1/39 www ...

Page 2

Contents Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

M29F200BT, M29F200BB 4.0.6 4.0.7 4.0.8 4.0.9 4.0.10 5 Status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

List of tables List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 5

M29F200BT, M29F200BB List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 6

... The M29F200B Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F200B is fully backward compatible with the M29F200. ...

Page 7

M29F200BT, M29F200BB Table 1. Signal names Name A0-A16 DQ0-DQ7 DQ8-DQ14 DQ15A– BYTE Figure 1. Logic diagram Description Address Inputs Data Inputs/Outputs Data Inputs/Outputs Data Input/Output or Address Input Chip Enable ...

Page 8

Description Figure 2. SO connections 8/ M29F200BT ...

Page 9

M29F200BT, M29F200BB Figure 3. TSOP connections A15 1 48 A14 A13 A12 A11 A10 M29F200BT M29F200BB ...

Page 10

... Figure 1: Logic connected to this device. 2.1 Address Inputs (A0-A16) The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent to the Command Interface of the internal state machine. 2.2 Data Inputs/Outputs (DQ0-DQ7) The Data Inputs/Outputs output the data stored at the selected address during a Bus Read operation ...

Page 11

... PHPHH 2.9 Ready/Busy Output (RB) The Ready/Busy pin is an open-drain output that can be used to identify when the memory array can be read. Ready/Busy is high-impedance during Read mode, Auto Select mode and Erase Suspend mode. After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy becomes high-impedance. See Characteristics ( ° ...

Page 12

... Signal descriptions programming or erasing during this time then the operation aborts and the memory contents being altered will be invalid. A 0.1µF capacitor should be connected between the V Ground pin to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during program and erase operations ...

Page 13

... Enable are ignored by the memory and do not affect bus operations. 3.1 Bus Read Bus Read operations read from the memory cells, or specific registers in the Command Interface. A valid Bus Read operation involves setting the desired address on the Address Inputs, applying a Low signal, V ...

Page 14

... They require V applied to some pins. 3.6.1 Electronic Signature The memory has two codes, the manufacturer code and the device code, that can be read to identify the memory. These codes can be read by applying the signals listed in and Table 3, Bus operations ...

Page 15

M29F200BT, M29F200BB Table 3. Bus operations, BYTE = V Operation Bus Read Bus Write Output Disable Standby Read Manufacturer Code Read Device Code (1) IH Address Inputs A0-A16 ...

Page 16

... Program command The Program command can be used to program a value to one address in the memory array at a time. The command requires four Bus Write operations, the final write operation latches the address and data in the internal state machine and starts the Program/Erase Controller. ...

Page 17

... Read mode. Note that the Program command cannot change a bit set at ’0’ back to ’1’. One of the Erase Commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’. 4.0.4 Unlock Bypass command The Unlock Bypass command is used in conjunction with the Unlock Bypass Program command to program the memory ...

Page 18

... Command interface The Chip Erase Command sets all of the bits in unprotected blocks of the memory to ’1’. All previous data is lost. 4.0.8 Block Erase command The Block Erase command can be used to erase a list of one or more blocks. Six Bus Write operations are required to select the first block in the list. Each additional block in the list can be selected by repeating the sixth Bus Write operation using the address of the additional block. The Block Erase operation starts the Program/Erase Controller about 50µ ...

Page 19

M29F200BT, M29F200BB 4.0.10 Erase Resume command The Erase Resume command must be used to restart the Program/Erase Controller from Erase Suspend. An erase can be suspended and resumed more than once. Table 4. Commands, 16-bit mode, BYTE = V Command ...

Page 20

... After the Unlock Bypass command, issue Unlock Bypass Program or Unlock Bypass Reset commands. 8. After the Unlock Bypass Reset command read the memory as normal until another command is issued. 9. After the Erase Suspend command, read non-erasing memory blocks as normal, issue Auto Select and Program commands on non-erasing blocks as normal. ...

Page 21

... Program, Erase times and Program, Erase endurance cycles ( 70°C, –40 to 85°C or –40 to 125°C) A Parameter Chip Erase (All bits in the memory set to ‘0’) Chip Erase Block Erase (64 Kbytes) Program (Byte or Word) Chip Program (Byte by Byte) Chip Program (Word by Word) Program/Erase Cycles (per Block) 1 ...

Page 22

... The Error Bit can be used to identify errors detected by the Program/Erase Controller. The Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the correct data to the memory. If the Error Bit is set a Read/Reset command must be issued 22/39 Table 7: Status Register flowchart, gives an example of how to use the Data Polling Bit ...

Page 23

... During Erase Suspend the Alternative Toggle Bit changes from ’0’ to ’1’ to ’0’, etc. with successive Bus Read operations from addresses within the blocks being erased. Bus Read operations to addresses within blocks not being erased will output the memory cell data Read mode. ...

Page 24

Status register Table 7. Status Register Bits Operation Program Program during Erase Suspend Program Error Chip Erase Block Erase before timeout Block Erase Erase Suspend Erase Error 1. Unspecified data bits should be ignored. 24/39 (1) Address DQ7 DQ6 Any ...

Page 25

M29F200BT, M29F200BB Figure 4. Data polling flowchart START READ DQ5 & DQ7 at VALID ADDRESS DQ7 YES = DATA NO NO DQ5 = 1 YES READ DQ7 at VALID ADDRESS DQ7 YES = DATA NO FAIL PASS AI03598 Status register ...

Page 26

Status register Figure 5. Data toggle flowchart 26/39 M29F200BT, M29F200BB START READ DQ5 & DQ6 READ DQ6 DQ6 NO = TOGGLE YES NO DQ5 = 1 YES READ DQ6 TWICE DQ6 NO = TOGGLE YES FAIL PASS AI01370B ...

Page 27

M29F200BT, M29F200BB 6 Maximum rating Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are ...

Page 28

DC and ac parameters 7 DC and ac parameters This section summarizes the operating measurement conditions, and the dc and ac characteristics of the device. The parameters in the dc and ac characteristics Tables that follow, are derived from tests ...

Page 29

M29F200BT, M29F200BB Figure 7. AC testing load circuit Table 11. DC characteristics (T Symbol I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 I Supply Current (Standby) TTL CC2 Supply Current (Standby) I CC3 ...

Page 30

DC and ac parameters Table 12. Read ac characteristics ( 70°C, –40 to 85°C or –40 to 125°C) Symbol Alt Address Valid to Next Address t t AVAV RC Valid t t Address Valid to Output Valid ...

Page 31

M29F200BT, M29F200BB Table 13. Write ac characteristics, Write Enable controlled (T – °C or –40 to 125 °C) Symbol Alt t t Address Valid to Next Address Valid AVAV Chip Enable Low to Write Enable ...

Page 32

DC and ac parameters Table 14. Write AC Characteristics, Chip Enable Controlled ( °C, – °C or –40 to 125 °C) A Symbol Alt t t Address Valid to Next Address Valid AVAV WC ...

Page 33

M29F200BT, M29F200BB Table 15. Reset/Block Temporary Unprotect AC Characteristics ( °C, – °C or –40 to 125 °C) A Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable t t ...

Page 34

Package Mechanical 8 Package Mechanical Figure 12. TSOP48 - 48 lead Plastic Thin Small Outline 20mm, package outline DIE 1. Drawing is not to scale. Table 16. TSOP48 - 48 lead Plastic Thin Small Outline, ...

Page 35

M29F200BT, M29F200BB Figure 13. SO44 - 44 lead Plastic Small Outline, 500 mils body width, package outline SO-F 1. Drawing is not to scale. Table 17. SO44 - 44 lead Plastic Small Outline, 500 mils body width, ...

Page 36

... M29F200BB in Temperature Range option 3. The last two characters of the ordering code may be replaced by a letter code for preprogrammed parts, otherwise devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you ...

Page 37

M29F200BT, M29F200BB Appendix A Block addresses Table 19. Top Boot block addresses, M29F200BT Size # (Kbytes Table 20. Bottom Boot Block Addresses, M29F200BB Size # (Kbytes) ...

Page 38

Revision history 10 Revision history Table 21. Document revision history Date Revision July 1999 10/08/99 07/28/00 19-Sep-2005 22-Mar-2007 38/39 1.0 First Issue Chip Erase Max. specification added Block Erase Max. specification added Program Max. specification added 2.0 Chip Program Max. ...

Page 39

M29F200BT, M29F200BB Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein ...