M24C04-WMN6P STMicroelectronics, M24C04-WMN6P Datasheet - Page 20

• Manufacturer Part Number: M24C04-WMN6P
• Description: IC EEPROM 4KBIT 400KHZ 8SOIC
• Manufacturer: STMicroelectronics

Specifications of M24C04-WMN6P

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 4K (512 x 8)
• Speed: 400kHz
• Interface: I²C, 2-Wire Serial
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Organization: 512 x 8
• Interface Type: I2C
• Maximum Clock Frequency: 0.4 MHz
• Access Time: 900 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.5 V
• Maximum Operating Current: 2 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Supply Voltage: 2.5 V, 5.5 V
• Capacitance, Input: 8 pF (SDA), 6 pF (Other Pins)
• Current, Input, Leakage: ±2 μA
• Current, Operating: 2 mA
• Current, Output, Leakage: ±2
• Current, Supply: 3 mA
• Data Retention: >40 yrs.
• Density: 4K
• Package Type: SO8
• Temperature, Operating: -40 to +85 °C
• Temperature, Operating, Maximum: 85 °C
• Temperature, Operating, Minimum: -40 °C
• Time, Access: 900 ns
• Time, Fall: 50 ns
• Time, Rise: 50 ns
• Voltage, Esd: 4000 V
• Voltage, Input, High: 3.5 to 6.5 V
• Voltage, Input, High Level: 0.7 V
• Voltage, Input, Low: 0.75 to 1.65 V
• Voltage, Input, Low Level: –0.45 V
• Voltage, Output, Low: 0.4 V
• Voltage, Supply: 2.5 to 5.5 V
• Memory Configuration: 512 X 8
• Clock Frequency: 400kHz
• Supply Voltage Range: 2.5V To 5.5V
• Memory Case Style: SOIC
• No. Of Pins: 8
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8562; M24C04-WMN6P

DC and AC parameters
20/39
Table 9.
1. The device is not selected after a power-up, after a read command (after the Stop condition), or after the
Table 10.
1. The device is not selected after a power-up, after a read command (after the Stop condition), or after the
Symbol
Symbol
I
V
I
V
I
V
I
CC1
V
V
I
I
completion of the internal write cycle t
CC1
V
completion of the internal write cycle t
I
LO
CC
I
CC
LO
LI
OL
OL
IH
LI
IL
IH
IL
Input leakage current
(SCL, SDA, E0, E1,and E2)
Output leakage current
Supply current
Standby supply current
Input low voltage (SDA,
SCL, WC)
Input high voltage (SDA,
SCL, WC)
Output low voltage
Input leakage current (SCL,
SDA, E0, E1,and E2)
Output leakage current
Supply current
Standby supply current
Input low voltage (SDA,
SCL, WC)
Input high voltage (SDA,
SCL, WC)
Output low voltage
DC characteristics (M24Cxx-W, device grade 6)
DC characteristics (M24Cxx-W, device grade 3)
Parameter
Parameter
Doc ID 5067 Rev 16
W
W
V
Test conditions (in addition to those in
Device not selected
SDA in Hi-Z, external voltage applied on
IN
(t
(t
W
I
W
Device not selected
(in addition to those in
Device not selected
OL
= V
I
OL
is triggered by the correct decoding of a write command).
is triggered by the correct decoding of a write command).
I
SDA in Hi-Z, external voltage
applied on SDA: V
OL
I
V
= 2.1 mA when V
OL
V
SS
= 2.1 mA when V
IN
V
V
CC
= 3 mA when V
(rise/fall time < 50 ns)
(rise/fall time < 50 ns)
V
for 2.5 V < V
CC
CC
= 3 mA when V
or V
= V
(rise/fall time < 50 ns)
(rise/fall time < 50 ns)
or V
CC
or V
M24C16, M24C08, M24C04, M24C02, M24C01
= 2.5 V, f
Test condition
SDA: V
Standby mode
= 5 V, f
= 2.5 V, f
SS
CC
= 5 V, f
CC
CC
or V
, V
Table
, device in Standby mode
, V
CC
C
SS
(1)
CC
C
CC
c
= 400 kHz
c
CC
= 400 kHz
= 400 kHz
, V
= 2.5 V
or V
(1)
(1)
6)
, device in
= 5 V
= 400 kHz
CC
SS
CC
CC
IN
, V
CC
, V
CC
5.5 V
= 2.5 V or
or V
= 5.5 V
= V
Table
IN
IN
= 2.5 V or
= 5.5 V
= V
= V
SS
CC
SS
SS
or V
6)
CC
0.7V
–0.45
Min.
,
0.7V
–0.45 0.3V
CC
Min.
CC
0.3V
V
Max.
CC
± 2
± 2
0.4
V
3
3
5
2
Max. Unit
CC
± 2
± 2
0.4
+1
CC
2
1
1
+1
CC
Unit
mA
mA
µA
µA
µA
µA
mA
mA
V
V
V
µA
µA
µA
V
V
V