CY14B101L-SP35XCT Cypress Semiconductor Corp, CY14B101L-SP35XCT Datasheet - Page 12

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CY14B101L-SP35XCT

Manufacturer Part Number
CY14B101L-SP35XCT
Description
IC NVSRAM 1MBIT 35NS 48SSOP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY14B101L-SP35XCT

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
1M (128K x 8)
Speed
35ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-SSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
AutoStore or Power Up RECALL
Switching Waveforms
Notes
Document Number: 001-06400 Rev. *K
t
t
V
t
13. t
14. If an SRAM WRITE has not taken place since the last nonvolatile cycle, no STORE will take place.
15. Industrial Grade devices requires 15 ms max.
HRECALL
STORE
VCCRISE
SWITCH
Note Read and Write cycles are ignored during STORE, RECALL, and while Vcc is below V
HRECALL
Read & Write Inhibited
Parameter
POWER-UP RECALL
[14, 15]
AutoStore
[13]
starts from the time V
V
SWITCH
V
CC
t
t
RESTORE
HLHZ
t
VCCRISE
CC
Alt
rises above V
t
HRECALL
Power up RECALL Duration
STORE Cycle Duration
Low Voltage Trigger Level
V
SWITCH
CC
Figure 9. AutoStore/Power Up RECALL
Rise Time
.
Description
t
STORE
SWITCH
t
HRECALL
STORE occurs only
if a SRAM write
has happened
Min
150
CY14B101L
t
STORE
Max
12.5
2.65
20
No STORE occurs
without atleast one
SRAM write
CY14B101L
Page 12 of 20
Unit
ms
ms
μs
V
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