CY7C1480V33-200AXCT Cypress Semiconductor Corp, CY7C1480V33-200AXCT Datasheet - Page 15

IC SRAM 72MBIT 200MHZ 100LQFP

CY7C1480V33-200AXCT

Manufacturer Part Number
CY7C1480V33-200AXCT
Description
IC SRAM 72MBIT 200MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1480V33-200AXCT

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
72M (2M x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1480V33-200AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document Number: 38-05283 Rev. *J
3.3V TAP AC Test Conditions
Input pulse levels ............................................... .V
Input rise and fall times ................................................... 1 ns
Input timing reference levels ...........................................1.5V
Output reference levels...................................................1.5V
Test load termination supply voltage...............................1.5V
3.3V TAP AC Output Load Equivalent
TAP DC Electrical Characteristics And Operating Conditions
(0°C < T
Identification Register Definitions
Notes
V
V
V
V
V
V
I
Revision Number (31:29)
Device Depth (28:24)
Architecture/Memory Type(23:18)
Bus Width/Density(17:12)
Cypress JEDEC ID Code (11:1)
ID Register Presence Indicator (0)
11. All voltages referenced to V
X
OH1
OH2
OL1
OL2
IH
IL
Parameter
TDO
A
Instruction Field
< +70°C; VDD = 3.135 to 3.6V unless otherwise noted)
Output HIGH Voltage I
Output HIGH Voltage I
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Z = 50Ω
O
SS
Description
(GND).
CY7C1480V33
00000110100
(2M x36)
000000
100100
01011
1.5V
000
1
I
I
I
I
GND < V
OH
OH
OH
OL
OL
OL
20pF
= 8.0 mA
= 1.0 mA
= 100 µA
50Ω
= –4.0 mA, V
= –1.0 mA, V
= –100 µA
SS
CY7C1482V33
IN
00000110100
to 3.3V
(4M x 18)
< V
000000
010100
01011
000
Test Conditions
DDQ
1
DDQ
DDQ
[11]
= 3.3V
= 2.5V
2.5V TAP AC Test Conditions
Input pulse levels................................................. V
Input rise and fall time .....................................................1 ns
Input timing reference levels......................................... 1.25V
Output reference levels ................................................ 1.25V
Test load termination supply voltage ............................ 1.25V
2.5V TAP AC Output Load Equivalent
CY7C1486V33
V
V
V
V
V
V
V
V
V
V
00000110100 Enables unique identification of SRAM
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
(1M x72)
000000
110100
01011
000
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
TDO
1
Describes the version number
Reserved for internal use
Defines memory type and architecture
Defines width and density
vendor
Indicates the presence of an ID register
Z = 50Ω
O
Min.
–0.3
–0.3
2.4
2.0
2.9
2.1
2.0
1.7
–5
Description
CY7C1480V33
CY7C1482V33
CY7C1486V33
V
V
1.25V
DD
DD
Max.
0.4
0.4
0.2
0.2
0.8
0.7
5
+ 0.3
+ 0.3
20pF
50Ω
Page 15 of 31
SS
to 2.5V
Unit
µA
V
V
V
V
V
V
V
V
V
V
V
V
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