CY7C144-15JXC Cypress Semiconductor Corp, CY7C144-15JXC Datasheet - Page 11

• Manufacturer Part Number: CY7C144-15JXC
• Description: IC SRAM 64KBIT 15NS 68PLCC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C144-15JXC

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Asynchronous
• Memory Size: 64K (8K x 8)
• Speed: 15ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 68-PLCC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Document #: 38-06034 Rev. *E
Notes
20. The internal write time of the memory is defined by the overlap of CE or SEM LOW and R/W LOW. Both signals must be LOW to initiate a write, and either signal can
21. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of t
22. R/W must be HIGH during all address transitions.
23. Data I/O pins enter high impedance when OE is held LOW during write.
DATA OUT
ADDRESS
SEM OR CE
SEM OR CE
DATA OUT
terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
placed on the bus for the required t
be as short as the specified t
ADDRESS
DATA IN
DATA IN
R/W
OE
R/W
Figure 9. Write Cycle No. 2: R/W Three-State Data I/Os (Either Port)
Figure 8. Write Cycle No. 1: OE Three-State Data I/Os (Either Port)
PWE
t
SA
.
SD
(continued)
. If OE is HIGH during a R/W controlled write cycle (as in this example), this requirement does not apply and the write pulse can
t
SA
t
HZOE
t
SCE
t
t
SCE
AW
t
HIGH IMPEDANCE
AW
t
HZWE
t
WC
t
WC
t
PWE
t
PWE
t
PWE
SD
DATA VALID
t
SD
HIGH IMPEDANCE
DATAVALID
or (t
HZWE
+ t
SD
) to allow the I/O drivers to turn off and data to be
t
HD
t
t
HD
LZWE
t
[20, 21, 22]
HA
t
[20, 22, 23]
LZOE
CY7C144, CY7C145
t
HA
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