CY7C109BN-20ZXCT Cypress Semiconductor Corp, CY7C109BN-20ZXCT Datasheet - Page 2
![IC SRAM 1MBIT 20NS 32TSOP](/photos/7/23/72388/428-32-tsop_sml.jpg)
CY7C109BN-20ZXCT
Manufacturer Part Number
CY7C109BN-20ZXCT
Description
IC SRAM 1MBIT 20NS 32TSOP
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C109BNL-15VC.pdf
(9 pages)
Specifications of CY7C109BN-20ZXCT
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (128K x 8)
Speed
20ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-TSOP I
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document #: 001-06430 Rev. **
Selection Guide
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in High Z State
DC Input Voltage
Electrical Characteristics
Capacitance
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
V
V
V
V
I
I
I
I
I
I
C
C
Notes:
Parameter
IX
OZ
OS
CC
SB1
SB2
2. Minimum voltage is –2.0V for pulse durations of less than 20 ns.
3. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
4. Tested initially and after any design or process changes that may affect these parameters.
OH
OL
IH
IL
IN
OUT
Parameter
Output HIGH Voltage V
Output LOW Voltage V
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Current
Output Leakage
Current
Output Short
Circuit Current
V
Supply Current
Automatic CE
Power-Down Current
—TTL Inputs
Automatic CE
Power-Down Current
—CMOS Inputs
CC
[2]
[4]
[2]
....................................–0.5V to V
Description
Operating
.................................–0.5V to V
CC
to Relative GND
Input Capacitance
Output Capacitance
[3]
[2]
Description
Over the Operating Range
GND < V
GND < V
Output Disabled
V
V
f = f
Max. V
or CE
V
Max. V
CE
V
or V
or CE
CC
CC
CC
CC
IN
IN
1
MAX
< V
> V
IN
L
Test Conditions
= Min., I
= Max., V
= Min., I
= Max., I
> V
[2]
2
2
< 0.3V, f = 0
CC
CC
< V
IL
CC
.... –0.5V to +7.0V
< 0.3V,
CC
= 1/t
, f = f
I
I
, CE
,
< V
< V
IL
– 0.3V,
– 0.3V,
, V
OH
OL
RC
OUT
CC
CC
1
MAX
OUT
IN
= –4.0 mA
CC
CC
> V
7C1009B-12
= 8.0 mA
,
7C109B-12
> V
= 0 mA,
= GND
+ 0.5V
+ 0.5V
IH
IH
T
V
12
90
10
2
A
CC
L
or
= 25°C, f = 1 MHz,
= 5.0V
Min.
–0.3
7C1009BN-12
2.4
2.2
7C109BN-12
–1
–5
Test Conditions
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Operating Range
Commercial
Industrial
V
Range
CC
Max.
–300
7C1009B-15
7C109B-15
0.4
0.8
+1
+5
90
45
10
2
+ 0.3
15
80
10
2
Min.
–0.3
7C1009BN-15
2.4
2.2
7C109BN-15
–1
–5
−40°C to +85°C
Temperature
0°C to +70°C
V
Ambient
CC
Max.
–300
0.4
0.8
7C1009B-20
+1
+5
80
40
10
7C109B-20
2
+ 0.3
Max.
9
8
20
75
10
2
CY7C1009BN
Min.
–0.3
7C1009BN-20
2.4
2.2
7C109BN-20
–1
–5
CY7C109BN
V
CC
Max.
–300
5V ± 10%
5V ± 10%
0.4
0.8
+1
+5
75
30
10
2
Page 2 of 9
+ 0.3
Unit
V
pF
pF
Unit
mA
mA
mA
ns
CC
Unit
mA
mA
mA
mA
mA
µA
µA
V
V
V
V
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