CY7C1021B-12VXI Cypress Semiconductor Corp, CY7C1021B-12VXI Datasheet - Page 4

• Manufacturer Part Number: CY7C1021B-12VXI
• Description: IC SRAM 1MBIT 12NS 44SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1021B-12VXI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (64K x 16)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05145 Rev. *C
AC Test Loads and Waveforms
Switching Characteristics
OUTPUT
OUTPUT
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
Notes:
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
DBE
LZBE
HZBE
WC
SCE
AW
HA
SA
SD
HD
LZWE
HZWE
BW
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
6. At any given temperature and voltage condition, t
7. t
8. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE/BLE LOW. CE, WE and BHE/BLE must be LOW to initiate a write, and
Equivalent to: THÉVENIN
Equivalent to: THÉVENIN
I
the transition of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
INCLUDING
INCLUDING
JIG AND
JIG AND
SCOPE
SCOPE
OL
HZOE
Parameter
/I
5V
5V
OH
, t
and 30-pF load capacitance.
HZBE
30 pF
30 pF
, t
[8]
HZCE
(a)
(a)
EQUIVALENT
EQUIVALENT
, and t
R 481Ω
R 481Ω
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Byte Enable to Data Valid
Byte Enable to Low Z
Byte Disable to High Z
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
WE LOW to High Z
Byte Enable to End of Write
HZWE
are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
255Ω
255Ω
OUTPUT
OUTPUT
R2
R2
Over the Operating Range
OUTPUT
OUTPUT
Description
INCLUDING
INCLUDING
JIG AND
JIG AND
SCOPE
SCOPE
[6]
[6]
[6, 7]
[6]
[6, 7]
[6, 7]
5V
5V
HZCE
is less than t
30 pF
30 pF
167
167
5 pF
5 pF
(b)
(b)
LZCE
R 481Ω
, t
HZOE
1.73V
1.73V
[5]
is less than t
255Ω
255Ω
R2
R2
GND
GND
3.0V
3.0V
LZOE
Rise Time: 1 V/ns
Rise Time: 1 V/ns
Min.
12
12
3
0
3
0
0
9
8
0
0
6
0
3
8
7C1021B-12
, and t
HZWE
is less than t
Max.
12
12
12
6
6
6
6
6
6
10%
10%
90%
90%
LZWE
ALL INPUT PULSES
ALL INPUT PULSES
Min.
for any given device.
15
15
10
10
3
0
3
0
0
0
0
8
0
3
9
7C1021B-15
CY7C1021B
Max.
15
15
15
7
7
7
7
7
7
Page 4 of 10
Fall Time: 1 V/ns
90%
90%
10%
10%
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
[+] Feedback