CY7C1009B-15VXCT Cypress Semiconductor Corp, CY7C1009B-15VXCT Datasheet - Page 3

• Manufacturer Part Number: CY7C1009B-15VXCT
• Description: IC SRAM 1MBIT 15NS 32SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1009B-15VXCT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (128K x 8)
• Speed: 15ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05038 Rev. *C
AC Test Loads and Waveforms
Switching Characteristics
OUTPUT
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
Notes:
Parameter
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
LZWE
HZWE
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
6. t
7. At any given temperature and voltage condition, t
8. The internal write time of the memory is defined by the overlap of CE
9. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of t
INCLUDING
JIG AND
SCOPE
I
write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the
signal that terminates the write.
OL
HZOE
5V
/I
OH
, t
HZCE
and 30-pF load capacitance.
30 pF
[8]
, and t
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE
CE
CE
CE
Write Cycle Time
CE
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
WE LOW to High Z
(a)
1
1
1
1
1
1
HZWE
HIGH to Power-Down, CE
LOW to Data Valid, CE
LOW to Low Z, CE
HIGH to High Z, CE
LOW to Power-Up, CE
LOW to Write End, CE
R1 480Ω
are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
255Ω
R2
[9]
[5]
[7]
[6, 7]
[6, 7]
Description
OUTPUT
2
INCLUDING
JIG AND
SCOPE
2
HIGH to Low Z
LOW to High Z
5V
2
2
2
HZCE
HIGH to Write End
HIGH to Power-Up
HIGH to Data Valid
2
LOW to Power-Down
is less than t
5 pF
(b)
[7]
R1 480Ω
[6, 7]
LZCE
1
LOW, CE
, t
HZOE
Equivalent to:
2
is less than t
255Ω
HIGH, and WE LOW. CE
R2
Min.
7C1009B-12
7C109B-12
OUTPUT
12
12
10
10
10
3
0
3
0
0
0
7
0
3
GND
3.0V
LZOE
HZWE
≤ 3 ns
Max.
, and t
12
12
12
6
6
6
6
and t
THÉ
HZWE
SD
VENIN EQUIVALENT
1
.
167Ω
and WE must be LOW and CE
Min.
7C1009B-15
7C109B-15
15
15
12
12
12
is less than t
0
3
0
3
0
0
8
0
3
10%
90%
ALL INPUT PULSES
Max.
15
15
15
7
7
7
7
LZWE
1.73V
for any given device.
Min.
7C1009B-20
CY7C1009B
7C109B-20
20
20
15
15
12
10
3
0
3
0
0
0
0
3
CY7C109B
2
HIGH to initiate a
Max.
Page 3 of 10
20
20
20
8
8
8
8
90%
10%
≤ 3 ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns