W29EE011P90Z Winbond Electronics, W29EE011P90Z Datasheet - Page 12

• Manufacturer Part Number: W29EE011P90Z
• Description: IC FLASH 1MBIT 90NS 32PLCC
• Manufacturer: Winbond Electronics

Specifications of W29EE011P90Z

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 1M (128K x 8)
• Speed: 90ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-PLCC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8. ELECTRICAL CHARACTERISTICS
8.1
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
8.2
8.2.1 Operating Characteristics
(V
8.2.2 Power-up Timing
Power Supply Current
Standby V
(TTL input)
Standby V
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Power Supply Voltage to GND Potential
Operating Temperature
Storage Temperature
D.C. Voltage on Any Pin to Ground Potential Except #OE
Transient Voltage (< 20 nS) on Any Pin to Ground Potential
Voltage on #OE Pin to Ground Potential
Power-up to Read Operation
Power-up to Write Operation
DD
= 5.0V ±10%, GND = 0V, T
of the device.
PARAMETER
Absolute Maximum Ratings
DC Characteristics
DD
DD
Current
Current
PARAMETER
A
PARAMETER
SYM.
= 0 to 70° C)
I
I
I
I
I
V
V
V
V
CC
SB
SB
LI
LO
IL
IH
OL
OH
1
2
#CE = #OE = V
all I/Os open
Address inputs = V
at f = 5 MHz
#CE = V
Other inputs = V
#CE = V
Other inputs = V
V
V
I
I
OL
OH
IN
IN
= 2.1 mA
= GND to V
= GND to V
= -0.4 mA
TEST CONDITIONS
IH
DD
, all I/Os open
-0.3V, all I/Os open
- 12 -
DD
DD
IL
-
-
IL
DD
T
T
, #WE = V
/V
SYMBOL
PU
PU
IL
-0.3V/GND
IH
/V
.READ
.WRITE
IH
,
IH
,
MIN.
-0.3
2.0
2.4
-0.5 to V
-1.0 to V
TYPICAL
-
-
-
-
-
-
-0.5 to +7.0
-65 to +150
-0.5 to 12.5
100
RATING
0 to +70
5
TYP.
LIMITS
20
2
DD
DD
-
-
-
-
-
-
-
+1.0
+1.0
W29EE011
V
DD
MAX.
0.45
100
0.8
50
10
3
1
-
+0.5
UNIT
mS
µS
UNIT
°C
°C
V
V
V
V
UNIT
mA
mA
µA
µA
µA
V
V
V
V