CY7C199C-20ZXI Cypress Semiconductor Corp, CY7C199C-20ZXI Datasheet - Page 5
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CY7C199C-20ZXI
Manufacturer Part Number
CY7C199C-20ZXI
Description
IC SRAM 256KBIT 20NS 28TSOP
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C199C-12VC.pdf
(13 pages)
Specifications of CY7C199C-20ZXI
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
256K (32K x 8)
Speed
20ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-TSOP I
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C199C-20ZXI
Manufacturer:
CYP
Quantity:
5 530
Document #: 38-05408 Rev. *C
AC Test Conditions
AC Electrical Characteristics
C1
C2
R1
R2
R
V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Notes:
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
5. At any given temperature and voltage condition, t
6. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any
7. t
TH
TH
Parameter
of these signals can terminate the write. The input data set–up and hold timing should be referenced to the leading edge of the signal that terminates the write.
HZOE
Parameter
, t
HZCE
, t
HZWE
Read Cycle Time
Address to Data Valid
Data Hold from Addres Change
CE to Data Valid
OE to Data Valid
OE to Low Z
OE to High Z
CE to Low Z
CE to High Z
CE to Power-up
CE to Power-down
Write Cycle Time
CE to Write End
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE LOW to High Z
WE HIGH to Low Z
are specified as in part (b) of the A/C Test Loads. Transitions are measured ± 200 mV from steady state voltage.
Description
Capacitor 1
Capacitor 2
Resistor 1
Resistor 2
Resistor Thevenin
Voltage Thevenin
[5, 6, 7]
HZCE
is less than t
Description
LZCE
Min
12
12
3
0
3
0
9
9
0
0
8
8
0
3
, t
HZOE
12 ns
is less than t
Max
12
12
12
5
5
5
7
LZOE
Min
, and t
15
15
10
10
3
0
3
0
0
0
9
9
0
3
15 ns
HZWE
is less than t
Max
15
15
15
7
7
7
7
Nom.
1.73
480
255
167
30
5
LZWE
Min
20
20
15
15
15
10
3
0
3
0
0
0
0
3
for any given device.
20 ns
CY7C199C
Max
20
20
20
10
9
9
9
Page 5 of 13
Unit
Unit
pF
Ω
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns