CY7C1041CV33-15ZXC Cypress Semiconductor Corp, CY7C1041CV33-15ZXC Datasheet - Page 6

• Manufacturer Part Number: CY7C1041CV33-15ZXC
• Description: IC SRAM 4MBIT 15NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1041CV33-15ZXC

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (256K x 16)
• Speed: 15ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 428-1736; CY7C1041CV3315ZXC; CY7C1041CV3315ZXC

Document #: 38-05134 Rev. *H
AC Switching Characteristics
Switching Waveforms
Read Cycle No. 1
Read Cycle No. 2 (OE Controlled)
Notes:
10. The minimum Write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of t
12. WE is HIGH for Read cycle.
13. Address valid prior to or coincident with CE transition LOW.
11. Device is continuously selected. OE, CE, BHE and/or BHE = V
Write Cycle
t
t
t
t
t
t
t
t
t
t
t
WC
SCE
AW
HA
SA
PWE
SD
HD
LZWE
HZWE
BW
Parameter
DATA OUT
CURRENT
DATA OUT
ADDRESS
BHE, BLE
SUPPLY
ADDRESS
V
CC
OE
CE
[9, 10]
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low-Z
WE LOW to High-Z
Byte Enable to End of Write
[11, 12]
PREVIOUS DATA VALID
Description
HIGH IMPEDANCE
t
t
LZCE
PU
[7]
[7, 8]
[12, 13]
t
ACE
t
t
LZBE
[5]
t
DBE
LZOE
t
DOE
Over the Operating Range (continued)
t
50%
OHA
Min.
10
t
7
7
0
0
7
5
0
3
7
AA
IL
.
-10
t
RC
Max.
5
t
RC
Min.
12
8
8
0
0
8
6
0
3
8
-12
HZWE
Max.
DATA VALID
6
and t
SD
Min.
15
10
10
10
10
.
0
0
7
0
3
-15
Max.
t
HZOE
DATA VALID
7
t
t
CY7C1041CV33
HZCE
HZBE
Min.
t
20
10
10
10
10
PD
0
0
8
0
3
50%
-20
IMPEDANCE
Max.
HIGH
8
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Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
I
I
ICC
ISB
CC
SB