M24C02-WDW6T STMicroelectronics, M24C02-WDW6T Datasheet - Page 21
M24C02-WDW6T
Manufacturer Part Number
M24C02-WDW6T
Description
IC EEPROM 2KBIT 400KHZ 8TSSOP
Manufacturer
STMicroelectronics
Datasheet
1.M24C01-WMN6TP.pdf
(39 pages)
Specifications of M24C02-WDW6T
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
2K (256 x 8)
Speed
400kHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
2.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-1607-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M24C02-WDW6T
Manufacturer:
TOSHIBA
Quantity:
734
Part Number:
M24C02-WDW6T
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
M24C02-WDW6TH-CA
Manufacturer:
ST
Quantity:
1 774
Part Number:
M24C02-WDW6TH-CA
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
M24C02-WDW6TP
Manufacturer:
FUJI
Quantity:
1 138
Part Number:
M24C02-WDW6TP
Manufacturer:
ST
Quantity:
20 000
M24C16, M24C08, M24C04, M24C02, M24C01
Table 11.
1. The device is not selected after a power-up, after a read command (after the Stop condition), or after the
Symbol
I
V
completion of the internal write cycle t
V
I
I
CC1
V
I
LO
CC
OL
LI
IH
IL
Input leakage current
(SCL, SDA, E0, E1,and E2)
Output leakage current
Supply current
Standby supply current
Input low voltage (SDA,
SCL, WC)
Input high voltage (SDA,
SCL, WC)
Output low voltage
DC characteristics (M24Cxx-R)
Parameter
Doc ID 5067 Rev 16
W
(t
W
(in addition to those in
Device not selected
is triggered by the correct decoding of a write command).
SDA in Hi-Z, external voltage
applied on SDA: V
V
I
OL
V
IN
CC
(rise/fall time < 50 ns)
or V
= V
1.8 V V
= 0.7 mA, V
Test condition
= 1.8 V, f
Standby mode
SS
CC
2.5 V V
, V
or V
CC
CC
CC
c
= 400 kHz
CC
= 1.8 V
(1)
CC
, device in
2.5 V
SS
, V
= 1.8 V
or V
IN
Table
= V
CC
SS
7)
DC and AC parameters
0.7V
–0.45
–0.45
Min.
CC
0.25 V
0.3 V
V
Max.
CC
± 2
± 2
0.8
0.2
1
+1
CC
CC
21/39
Unit
mA
µA
µA
µA
V
V
V
V