CY7C1021CV33-10VC Cypress Semiconductor Corp, CY7C1021CV33-10VC Datasheet - Page 6
![IC SRAM 1MBIT 10NS 44SOJ](/photos/7/23/72391/428-44-soj_sml.jpg)
CY7C1021CV33-10VC
Manufacturer Part Number
CY7C1021CV33-10VC
Description
IC SRAM 1MBIT 10NS 44SOJ
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1021CV33-10VC.pdf
(12 pages)
Specifications of CY7C1021CV33-10VC
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (64K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-SOJ
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1478
Document #: 38-05132 Rev. *C
Switching Waveforms
Read Cycle No. 2 (OE Controlled)
Read Cycle No. 1
DATA OUT
Notes:
10. Device is continuously selected. OE, CE, BHE and/or BHE = V
11. WE is HIGH for Read cycle.
12. Address valid prior to or coincident with CE transition LOW.
CURRENT
DATA OUT
ADDRESS
BHE, BLE
SUPPLY
ADDRESS
V
CC
OE
CE
[10, 11]
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
t
LZCE
PU
[11, 12]
t
ACE
t
t
LZBE
t
DBE
LZOE
t
DOE
50%
t
OHA
t
AA
IL
.
t
RC
t
RC
DATA VALID
t
HZOE
DATA VALID
t
t
HZCE
HZBE
CY7C1021CV33
t
PD
50%
IMPEDANCE
HIGH
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