CY7C1020CV33-15ZC Cypress Semiconductor Corp, CY7C1020CV33-15ZC Datasheet - Page 3

• Manufacturer Part Number: CY7C1020CV33-15ZC
• Description: IC SRAM 512KBIT 15NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1020CV33-15ZC

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 512K (32K x 16)
• Speed: 15ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1477

Document #: 38-05133 Rev. *B
AC Test Loads and Waveforms
Switching Characteristics
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
t
Notes:
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
DBE
LZBE
HZBE
WC
SCE
AW
HA
SA
PWE
SD
HD
LZWE
HZWE
BW
4.
5.
6.
7.
8.
Parameter
[7]
[7]
Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V.
At any given temperature and voltage condition, t
t
This parameter is guaranteed by design and is not tested.
The internal Write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE / BLE LOW. CE, WE and BHE / BLE must be LOW to initiate a Write,
and the transition of these signals can terminate the Write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the Write.
HZOE
OUTPUT
, t
HZBE
3.3V
[8]
, t
HZCE
30 pF
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low-Z
OE HIGH to High-Z
CE LOW to Low-Z
CE HIGH to High-Z
CE LOW to Power-up
CE HIGH to Power-down
Byte Enable to Data Valid
Byte Enable to Low-Z
Byte Disable to High-Z
Write Cycle Time
CE LOW to Write End
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE HIGH to Low-Z
WE LOW to High-Z
Byte Enable to End of Write
, and t
HZWE
R 317
(a)
are specified with a load capacitance of 5 pF as in part (c) of AC Test Loads. Transition is measured 500 mV from steady-state voltage.
Description
Over the Operating Range
351
[5]
[5]
R2
[5, 6]
[5]
[5, 6]
[5, 6]
GND
3.0V
Rise Time: 1 V/ns
[4]
HZCE
is less than t
10%
LZCE
90%
, t
HZOE
[4]
ALL INPUT PULSES
Min.
1020CV33-10
10
10
3
0
3
0
0
8
7
0
0
7
5
0
3
7
is less than t
(b)
Max.
10
10
10
LZOE
5
5
5
5
5
5
, and t
High-Z characteristics:
Fall Time: 1 V/ns
90%
HZWE
Min.
1020CV33-12
12
12
10%
3
0
3
0
0
9
8
0
0
8
6
0
3
8
OUTPUT
is less than t
3.3V
Max.
12
12
12
6
6
6
6
6
6
(c)
LZWE
5 pF
for any given device.
CY7C1020CV33
Min.
1020CV33-15
15
15
10
10
10
3
0
3
0
0
0
0
8
0
3
9
R 317
Max.
15
15
15
351
7
7
7
7
7
7
R2
Page 3 of 8
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns