CY7C008V-15AC Cypress Semiconductor Corp, CY7C008V-15AC Datasheet - Page 7

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CY7C008V-15AC

Manufacturer Part Number
CY7C008V-15AC
Description
IC SRAM 512KBIT 15NS 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C008V-15AC

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Memory Size
512K (64K x 8)
Speed
15ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1147

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Switching Characteristics
Data Retention Mode
The CY7C008V/009V and CY7018V/019V are designed with
battery backup in mind. Data retention voltage and supply cur-
rent are guaranteed over temperature. The following rules en-
sure data retention:
Note:
Document #: 38-06044 Rev. *B
18. CE = V
1. Chip enable (CE) must be held HIGH during data retention, with-
2. CE must be kept between V
3. The RAM can begin operation >t
t
t
t
t
t
t
INS
INR
SOP
SWRD
SPS
SAA
INTERRUPT TIMING
SEMAPHORE TIMING
in V
during the power-up and power-down transitions.
minimum operating voltage (3.0 volts).
Parameter
CC
CC
to V
, V
CC
in
= GND to V
– 0.2V.
INT Set Time
INT Reset Time
SEM Flag Update Pulse (OE or SEM)
SEM Flag Write to Read Time
SEM Flag Contention Window
SEM Address Access Time
CC
[16]
, T
A
= 25°C. This parameter is guaranteed but not tested.
CC
Description
– 0.2V and 70% of V
Over the Operating Range
RC
after V
CC
reaches the
CC
[10]
(continued)
Min.
10
5
5
Timing
V
CE
ICC
CC
-15
Parameter
DR1
Max.
15
15
15
CY7C008V/009V
CY7C018V/019V
Min.
10
5
5
3.0V
@ VCC
Data Retention Mode
Test Conditions
V
-20
CC
V
Max.
to V
CC
20
20
20
DR
CC
2.0V
= 2V
– 0.2V
CY7C008V/009V
CY7C018V/019V
Min.
12
5
5
[18]
3.0V
-25
Max.
Max.
20
20
25
50
V
Page 7 of 18
t
IH
RC
Unit
Unit
ns
ns
ns
ns
ns
ns
A

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