CY7C199-25VC Cypress Semiconductor Corp, CY7C199-25VC Datasheet - Page 4
![IC SRAM 256KBIT 25NS 28SOJ](/photos/7/9/70998/428-28-soj_sml.jpg)
CY7C199-25VC
Manufacturer Part Number
CY7C199-25VC
Description
IC SRAM 256KBIT 25NS 28SOJ
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C199-10VC.pdf
(16 pages)
Specifications of CY7C199-25VC
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
256K (32K x 8)
Speed
25ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-SOJ
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1068
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C199-25VC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
CY7C199-25VCT
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
AC Test Loads and Waveforms
Data Retention Characteristics
Data Retention Waveform
Note:
Document #: 38-05160 Rev. **
Equivalent to:
OUTPUT
5.
6.
V
I
t
t
CCDR
CDR
R
DR
[5]
Parameter
t
No input may exceed V
INCLUDING
R
[4]
< 3 ns for the -12 and the -15 speeds. t
5V
JIG AND
SCOPE
V
CE
CC
30 pF
OUTPUT
R1 481
THÉ VENIN EQUIVALENT
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
(a)
CC
CC
for Data Retention
+ 0.5V.
R2
255
167
Description
R
< 5 ns for the -20 and slower speeds
OUTPUT
INCLUDING
5V
[5]
1.73V
JIG AND
Over the Operating Range (L version only)
SCOPE
t
CDR
3.0V
5 pF
Com’l
Com’l L
R1 481
(b)
V
CE > V
V
V
DATA RETENTION MODE
R2
255
IN
IN
CC
C199–5
> V
< 0.3V
= V
CC
CC
Conditions
DR
V
DR
– 0.3V,
– 0.3V or
= 2.0V,
> 2V
GND
3.0V
[6]
10%
t
r
Min.
200
2.0
ALL INPUT PULSES
0
90%
3.0V
t
R
Max.
10
CY7C199
90%
Page 4 of 16
10%
Unit
t
C199–6
C199–7
ns
r
V
A
A
s