CY7C199-20PC Cypress Semiconductor Corp, CY7C199-20PC Datasheet - Page 5
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CY7C199-20PC
Manufacturer Part Number
CY7C199-20PC
Description
IC SRAM 256KBIT 20NS 28DIP
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C199-10VC.pdf
(16 pages)
Specifications of CY7C199-20PC
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
256K (32K x 8)
Speed
20ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1064
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C199-20PC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Switching Characteristics
Document #: 38-05160 Rev. **
READ CYCLE
t
t
t
t
t
t
t
t
t
t
t
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
Shaded area contains advance information.
Notes:
10. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate
11. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of t
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
7.
8.
9.
Parameter
Test conditions assume signal transition time of 3 ns or less for -12 and -15 speeds and 5 ns or less for -20 and slower speeds, timing reference levels of 1.5V,
input pulse levels of 0 to 3.0V, and output loading of the specified I
At any given temperature and voltage condition, t
t
a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
HZOE
, t
HZCE
, and t
[10, 11]
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE LOW to High Z
WE HIGH to Low Z
HZWE
are specified with C
Description
Over the Operating Range
[8]
[8]
[8,9]
[9]
[8]
[8, 9]
L
= 5 pF as in part (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage.
HZCE
is less than t
Min.
LZCE
8
3
0
3
0
8
7
7
0
0
7
5
0
3
7C199-8
OL
/I
[3, 7]
OH
, t
HZOE
and 30-pF load capacitance.
Max.
4.5
8
8
5
4
8
5
is less than t
Min.
HZWE
10
10
7C199-10
3
0
3
0
7
7
0
0
7
5
0
3
LZOE
and t
, and t
Max.
SD
10
10
10
.
5
5
5
6
HZWE
is less than t
Min.
12
12
7C199-12
3
0
3
0
9
9
0
0
8
8
0
3
LZWE
Max.
12
12
12
5
5
5
7
for any given device.
Min.
15
15
10
10
7C199-15
3
0
3
0
0
0
9
9
0
3
Max.
CY7C199
15
15
15
7
7
7
7
Page 5 of 16
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns