CY7C199-10VC Cypress Semiconductor Corp, CY7C199-10VC Datasheet - Page 3

• Manufacturer Part Number: CY7C199-10VC
• Description: IC SRAM 256KBIT 10NS 28SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C199-10VC

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 28-SOJ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1059

Electrical Characteristics
]
Capacitance
Document #: 38-05160 Rev. **
V
V
V
V
I
I
I
I
I
C
C
Note:
Parameter
IX
OZ
CC
SB1
SB2
4.
OH
OL
IH
IL
IN
OUT
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
Input Load
Current
Output Leakage
Current
V
Supply Current
Automatic CE
Power-Down
Current—
TTL Inputs
Automatic CE
Power-Down
Current—
CMOS Inputs
CC
Description
[4]
Operating
Input Capacitance
Output Capacitance
V
V
GND < V
GND < V
Output Disabled
V
I
f = f
Max. V
V
or V
Max. V
CE > V
V
V
OUT
CC
CC
CC
IN
IN
IN
Over the Operating Range
MAX
> V
> V
< 0.3V, f=0
IN
Description
= Max.,
= Min., I
= Min., I
= 0 mA,
Test Conditions
< V
CC
IH
CC
CC
CC
= 1/t
I
I
IL
, CE > V
,
< V
– 0.3V
< V
– 0.3V or
, f = f
RC
CC
CC
OH
OL
MAX
,
=8.0 mA
=–4.0 mA
IH
,
Com’l
L
Mil
Com’l
L
Com’l
L
Mil
T
V
A
CC
Min.
–0.5
2.4
2.2
–5
–5
= 25 C, f = 1 MHz,
[3]
7C199-20
= 5.0V
(continued)
Test Conditions
+0.3V
Max.
0.05
V
150
170
0.4
0.8
+5
+5
90
30
10
15
CC
5
Min.
-0.5
2.4
2.2
–5
–5
7C199-25
+0.3V
Max.
0.05
V
150
150
0.4
0.8
+5
+5
80
30
10
15
5
CC
Min.
-0.5
2.4
2.2
–5
–5
7C199-35
+0.3V
Max.
Max.
0.05
V
140
150
0.4
0.8
+5
+5
70
25
10
15
5
8
8
CC
Min.
-0.5
2.4
2.2
–5
–5
7C199-45
CY7C199
+0.3V
Max.
Page 3 of 16
0.05
V
140
150
0.4
0.8
+5
+5
70
25
10
15
Unit
5
CC
pF
pF
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
A
A
A