CY7C1021BV33-12ZC Cypress Semiconductor Corp, CY7C1021BV33-12ZC Datasheet - Page 6
![IC SRAM 1MBIT 12NS 44TSOP](/photos/7/23/72387/428-44-tsop_sml.jpg)
CY7C1021BV33-12ZC
Manufacturer Part Number
CY7C1021BV33-12ZC
Description
IC SRAM 1MBIT 12NS 44TSOP
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1021BV33-10VC.pdf
(11 pages)
Specifications of CY7C1021BV33-12ZC
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (64K x 16)
Speed
12ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-TSOP II
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1015
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1021BV33-12ZC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Switching Waveforms
Document #: 38-05148 Rev. *A
Write Cycle No. 2 (BLE or BHE Controlled)
BHE, BLE
Notes:
Write Cycle No. 1 (CE Controlled)
14. Data I/O is high impedance if OE or BHE and/or BLE= V
15. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
ADDRESS
DATA I/O
BHE, BLE
ADDRESS
DATA I/O
WE
CE
CE
WE
(continued)
t
SA
t
SA
[14, 15]
IH
.
t
AW
t
AW
t
WC
t
WC
t
t
BW
t
PWE
t
SCE
SCE
t
PWE
t
BW
t
SD
t
SD
t
HD
t
HD
CY7C1021BV33
t
HA
t
HA
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