CY7C1020-12ZC Cypress Semiconductor Corp, CY7C1020-12ZC Datasheet - Page 3

IC SRAM 512KBIT 12NS 44TSOP

CY7C1020-12ZC

Manufacturer Part Number
CY7C1020-12ZC
Description
IC SRAM 512KBIT 12NS 44TSOP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1020-12ZC

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
512K (32K x 16)
Speed
12ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-TSOP II
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1006
AC Test Loads and Waveforms
Electrical Characteristics
Capacitance
OUTPUT
Document #: 38-05058 Rev. **
V
V
V
V
I
I
I
I
I
Equivalent to: THÉVENIN
C
C
Note:
IX
OZ
CC
SB1
SB2
3.
OH
OL
IH
IL
IN
OUT
Parameter
INCLUDING
JIG AND
SCOPE
Tested initially and after any design or process changes that may affect these parameters.
5V
Parameter
30 pF
EQUIVALENT
[3]
(a)
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage Current
V
Supply Current
Automatic CE
Power-Down Current
—TTL Inputs
Automatic CE
Power-Down Current
—CMOS Inputs
R 481
CC
Operating
Input Capacitance
Output Capacitance
OUTPUT
255
Description
R2
Description
Over the Operating Range (continued)
OUTPUT
[1]
INCLUDING
JIG AND
SCOPE
5V
30 pF
167
5 pF
(b)
R 481
V
V
GND < V
GND < V
V
I
f = f
Max. V
V
V
Max. V
CE > V
V
or V
T
V
OUT
A
CC
CC
CC
IN
IN
IN
CC
1.73V
= 25 C, f = 1 MHz,
MAX
> V
< V
> V
IN
= 5.0V
1020-3
= Min., I
= Min., I
= Max.,
= 0 mA,
< 0.3V, f = 0
CC
CC
CC
IH
IL
CC
= 1/t
Test Conditions
, f = f
I
I
255
, CE > V
,
or
< V
< V
– 0.3V,
Test Conditions
– 0.3V,
R2
OH
OL
RC
CC
CC
MAX
= 8.0 mA
= –4.0 mA
, Output Disabled
IH
GND
3.0V
<3 ns
L
L
L
10%
90%
ALL INPUT PULSES
Max.
Min.
–0.5
8
8
2.4
2.2
–1
–2
7C1020-20
CY7C1020
Max.
160
130
100
0.4
6.0
0.8
+1
+2
20
10
3
Page 3 of 10
Unit
pF
pF
90%
10%
1020-4
Unit
mA
mA
mA
<3 ns
V
V
V
V
A
A
A

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