MT47H128M8HQ-187E:E TR Micron Technology Inc, MT47H128M8HQ-187E:E TR Datasheet - Page 53
![IC DDR2 SDRAM 1GBIT 60VFBGA](/photos/7/23/72317/mfg557-60-fbga_sml.jpg)
MT47H128M8HQ-187E:E TR
Manufacturer Part Number
MT47H128M8HQ-187E:E TR
Description
IC DDR2 SDRAM 1GBIT 60VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H256M4HQ-5EE_TR.pdf
(131 pages)
Specifications of MT47H128M8HQ-187E:E TR
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
1G (128M x 8)
Speed
1.875ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1425-2
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AC Overshoot/Undershoot Specification
Table 25: Address and Control Balls
Applies to address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, and ODT
Table 26: Clock, Data, Strobe, and Mask Balls
Applies to DQ, DQS, DQS#, RDQS, RDQS#, UDQS, UDQS#, LDQS, LDQS#, DM, UDM, and LDM
Figure 21: Overshoot
Figure 22: Undershoot
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 21)
Maximum peak amplitude allowed for undershoot area
(see Figure 22)
Maximum overshoot area above V
Maximum undershoot area below V
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 21)
Maximum peak amplitude allowed for undershoot area
(see Figure 22)
Maximum overshoot area above V
Maximum undershoot area below V
Some revisions will support the 0.9V maximum average amplitude instead of the 0.5V
maximum average amplitude shown in Table 25 and Table 26.
V
V
DD
V
SS
SS
/V
/V
/V
DDQ
SSQ
DD
DDQ
SSQ
SS
SSQ
(see Figure 21)
(see Figure 22)
(see Figure 21)
(see Figure 22)
Maximum amplitude
Maximum amplitude
53
Time (ns)
Time (ns)
AC Overshoot/Undershoot Specification
0.19 Vns
0.19 Vns
0.5 Vns
0.5 Vns
-187E
0.50V
0.50V
-187E
0.50V
0.50V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Undershoot area
Overshoot area
-25/-25E
0.66 Vns
0.66 Vns
1Gb: x4, x8, x16 DDR2 SDRAM
-25/-25E
0.23 Vns
0.23 Vns
0.50V
0.50V
0.50V
0.50V
Specification
Specification
0.80 Vns
0.80 Vns
0.23 Vns
0.23 Vns
-3/-3E
-3/-3E
0.50V
0.50V
0.50V
0.50V
© 2004 Micron Technology, Inc. All rights reserved.
1.00 Vns
1.00 Vns
0.28 Vns
0.28 Vns
0.50V
0.50V
0.50V
0.50V
-37E
-37E
1.33 Vns
1.33 Vns
0.38 Vns
0.38 Vns
0.50V
0.50V
0.50V
0.50V
-5E
-5E
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