MT47H32M16BN-25E:D TR Micron Technology Inc, MT47H32M16BN-25E:D TR Datasheet - Page 122

• Manufacturer Part Number: MT47H32M16BN-25E:D TR
• Description: IC DDR2 SDRAM 512MBIT 84FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H32M16BN-25E:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 84-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 78: RESET Function
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
Bank address
Command
Address
ODT
DQS 3
DM 3
CK#
CKE
A10
DQ 3
R
CK
TT
Bank a
READ
Col n
T0
High-Z
High-Z
Notes:
NOP 2
T1
1. V
2. Either NOP or DESELECT command may be applied.
3. DM represents DM for x4/x8 configuration and UDM, LDM for x16 configuration. DQS
4. In certain cases where a READ cycle is interrupted, CKE going HIGH may result in the
5. Initialization timing is shown in Figure 41 (page 83).
represents DQS, DQS#, UDQS, UDQS#, LDQS, LDQS#, RDQS, and RDQS# for the appropri-
ate configuration (x4, x8, x16).
completion of the burst.
DD
Bank b
Col n
READ
, V
T2
DDL
, V
DDQ
NOP 2
Indicates a break in
time scale
T3
, V
DO
TT
, and V
DO
NOP 2
T4
122
System
DO
RESET
REF
must be valid at all times.
t DELAY
Unknown
T5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
1
R
TT
On
High-Z
High-Z
Transitioning Data
t CL
t CK
©2004 Micron Technology, Inc. All rights reserved.
Start of normal 5
initialization
t CL
sequence
NOP 2
Ta0
4
T = 400ns (MIN)
t CKE (MIN)
All banks
Tb0
PRE
Don’t Care
High-Z
t RPA
Reset