MT46H8M32LFB5-75 IT:A TR Micron Technology Inc, MT46H8M32LFB5-75 IT:A TR Datasheet - Page 50

IC DDR SDRAM 256MBIT 90VFBGA

MT46H8M32LFB5-75 IT:A TR

Manufacturer Part Number
MT46H8M32LFB5-75 IT:A TR
Description
IC DDR SDRAM 256MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT46H8M32LFB5-75 IT:A TR

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (8Mx32)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 35:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Cdommand
CK#
CKE
CK
All banks idle with no
activity on the data bus
Deep Power-Down
Notes:
NOP
T0
1. Clock must be stable prior to CKE going HIGH.
2. DPD = deep power-down command.
3. Upon exit from deep power-down mode, a PRECHARGE ALL command must be issued,
followed by the initialization sequence (see page 14).
t IS
DPD
T1
Enter deep power-down mode
2
T2
(
(
(
(
)
(
)
t CKE
)
)
)
(
(
(
)
(
)
(
)
)
)
50
Ta0
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
NOP
Ta1
Exit deep power-down mode
T = 200µs
NOP
Ta2
©2005 Micron Technology, Inc. All rights reserved.
Don’t Care
Operations
Valid
Ta3
3

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