MT29F8G08FACWP:C TR Micron Technology Inc, MT29F8G08FACWP:C TR Datasheet - Page 41

• Manufacturer Part Number: MT29F8G08FACWP:C TR
• Description: IC FLASH 8GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08FACWP:C TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Table 16:
Table 17:
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__2.fm - Rev. D 12/06 EN
Parameter
Parameter
Sequential read current
Program current
Erase current
Standby current (TTL)
Standby current (CMOS)
Input leakage current
Output leakage current
Input high voltage
Input low voltage
(all inputs)
Output high voltage
Output low voltage
Output low current
Valid block number
MT29F2GxxABC
MT29F4GxxBBC
MT29F8GxxFBC
MT29F2GxxABC
MT29F4GxxBBC
MT29F8GxxFBC
MT29F2GxxABC
MT29F4GxxBBC
MT29F8GxxFBC
M29FxGxxxBC 1.8V Device DC and Operating Characteristics
Valid Blocks
Notes: 1. Invalid blocks are blocks that contain 1 or more bad bits. The device may contain bad
2. Block 00h (the first block) is guaranteed to be valid and does not require error correction
3. The number of invalid blocks in each 4Gb section will not exceed 80.
CE#, CLE, ALE, WE#, RE#, WP#, R/B#
t
blocks upon shipment. Additional bad blocks may develop over time; however, the total
number of available blocks will not drop below N
device. Do not erase or program blocks marked invalid by the factory.
up to 1,000 PROGRAM/ERASE cycles.
RC = 50ns; CE# = V
Symbol
N
VB
I/O [7:0], I/O [15:0]
V
CE# = V
V
OUT
WP# = 0V/V
WP# = 0V/V
I
IN
Conditions
OH
I
OL
V
CE# = V
OL
= 0V to V
= 0V to V
= –100µA
= 100µA
= 0.1V
CC
–
–
–
MT29F2GxxAxC
MT29F4GxxBxC
MT29F8GxxFxC
- 0.2V;
IH
IL
; I
;
CC
CC
CC
OUT
Device
CC
= 0mA
41
2Gb, 4Gb, 8Gb: x8, x16 NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
Symbol
OL
I
I
I
V
I
I
V
V
I
V
CC
CC
CC
SB
SB
(R/B#)
I
LO
OH
2,008
4,016
8,032
OL
LI
IH
IL
Min
1
2
1
2
3
VB
0.8 x V
V
CC
Min
–0.3
during the endurance life of the
3
–
–
–
–
–
–
–
–
–
–
–
–
–
–
– 0.1
2,048
4,096
8,192
Max
Electrical Characteristics
CC
©2005 Micron Technology, Inc. All rights reserved.
Typ
10
20
40
8
8
8
4
–
–
–
–
–
–
–
–
–
–
–
Blocks
Unit
V
0.2 x V
CC
Max
±10
±20
±40
±10
±20
±40
100
200
0.1
15
15
15
50
1
–
–
+ 0.3
CC
Notes
1, 2
3
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V