MT48LC2M32B2TG-55:G TR Micron Technology Inc, MT48LC2M32B2TG-55:G TR Datasheet - Page 43
![IC SDRAM 64MBIT 5.5NS 86TSOP](/photos/7/22/72264/557-86-tsop_sml.jpg)
MT48LC2M32B2TG-55:G TR
Manufacturer Part Number
MT48LC2M32B2TG-55:G TR
Description
IC SDRAM 64MBIT 5.5NS 86TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT48LC2M32B2P-6G_TR.pdf
(69 pages)
Specifications of MT48LC2M32B2TG-55:G TR
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (2Mx32)
Speed
5.5ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Electrical Specifications
Table 11:
Temperature and Thermal Impedance
PDF: 09005aef811ce1fe/Source: 09005aef811ce1d5
64MSDRAMx32_2.fm - Rev. J 12/08 EN
Absolute Maximum Ratings
Stresses greater than those listed in Table 11 may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at these or any
other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
It is imperative that the SDRAM device’s temperature specifications, shown in Table 12
on page 44, be maintained in order to ensure the junction temperature is in the proper
operating range to meet data sheet specifications. An important step in maintaining the
proper junction temperature is using the device’s thermal impedances correctly. The
thermal impedances are listed in Table 13 on page 44 for the applicable die revision and
packages. These thermal impedance values vary according to the density, package, and
particular design used for each device.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08, Thermal Applications prior to using the thermal impedances listed
in Table 13 on page 44. To ensure the compatibility of current and future designs,
contact Micron Applications Engineering to confirm thermal impedance values.
The SDRAM device’s safe junction temperature range can be maintained when the T
specification is not exceeded. In applications where the device’s ambient temperature is
too high, use of forced air and/or heat sinks may be required in order to satisfy the case
temperature specifications.
Parameter
Voltage on V
Voltage on inputs, NC or I/O pins relative to V
Operating temperature
T
T
T
Storage temperature (plastic)
Power dissipation
A
A
A
(commercial)
(industrial)
(automotive)
DD
, V
DD
Q supply relative to V
43
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SS
SS
Electrical Specifications
Min
–1V
–1V
–40
–40
–55
0
–
©2001 Micron Technology, Inc. All rights reserved.
64Mb: x32 SDRAM
Max
+105
+150
+4.6
+4.6
+85
70
1
Units
°C
°C
W
V
V
C